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Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50
Figure 1: a) Comparison between tapping mode atomic force microscopy (tAFM) morphologies of low temperature (...
Figure 2: a) Tapping mode atomic force microscopy (tAFM) morphology of the PEN surface and b) a schematic rep...
Figure 3: a) Tapping mode atomic force microscopy (tAFM) morphology and b) schematic illustration of the alum...
Figure 4: a) Tapping mode atomic force microscopy (tAFM) morphology and b) schematic illustration of the grap...
Figure 5: a) Id–Vd characteristics at different back gate bias values and b) Id–Vg transfer characteristic fo...
Figure 6: Transfer conductance, gm, of the Gr-FET, calculated from the Id vs Vg transfer characteristic.
Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24
Figure 1: As-grown graphene on a copper foil: (a) Optical image, (b) Raman Spectroscopy, (c) AFM morphology a...
Figure 2: Optical image of a (13 × 10) mm2 graphene membrane transferred onto SiO2 (a), and AFM morphologies ...
Figure 3: Tapping-mode AFM images of the bare PEN surface (a) and of graphene transferred onto PEN (b).
Figure 4: (a) Optical Image of a TLM structure, (b) I–V characteristics measured between pairs of contacts at...
Figure 5: (a) Schematic representation of the back-gated TLM device. (b) Resistance versus distance between a...
Figure 6: TRCAFM of Graphene on SiO2: (a) morphology and (c) the related histogram, (b) current map and (d) t...