1 article(s) from Sarmanova, Marina
MD configuration of a GaN step with a step height of h = 2c during indentation of surface atoms wit...
Jump to Figure 1
Stress fluctuation multiplied by the squared per-atom volume along the y-axis of the upper Ga atom...
Jump to Figure 2
Local -oriented indentation modulus for three different step heights along the y-axis. Measure...
Jump to Figure 3
-oriented indentation modulus for three different step heights along y. Measured by indenting ...
Jump to Figure 4
Schematic FEM configuration of the indentation on top of the step by using a flatpunch indenter.
Jump to Figure 5
FEM simulation of indentation modulus for three different step heights by using a flatpunch indente...
Jump to Figure 6
Topography (a) and indentation modulus (b) map of the area around a GaN step.
Jump to Figure 7
Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225
Subscribe to our Latest Articles RSS Feed.
Register and get informed about new articles.
Follow the Beilstein-Institut