2 article(s) from Ursaki, Veaceslav V
SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...
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(A–C) SEM images in cross section at higher magnification of the porous layers obtained by anodizat...
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(A) SEM images of the formation of interrupted GaAs nanowires on the (111)B surface anodized in NaC...
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(A) SEM image in cross section of a GaAs(111)B sample anodized at 3 V for 20 min in 1 M HNO3. (B, C...
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PL spectra of bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K.
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XRD pattern of the anodized GaAs(111)B sample.
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(A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for de...
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Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power den...
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Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81
a) SEM images of ZnMgO films deposited on p-Si substrates by spin coating (left column) and aerosol...
a) SEM image of a ZnMgO film prepared by aerosol spray pyrolysis. b) SEM image of a ZnMgO film prep...
Elemental composition of a ZnO (a) and a Zn0.6Mg0.4O (b) film determined by EDAX analysis.
PL spectra of Zn1−xMgxO films deposited by spin coating with x values of 0.00 (1); 0.05 (2); 0.15 (...
PL spectra of Zn1−xMgxO films deposited by spin coating with x values of 0.00 (1); 0.10 (2); and 0....
a) XRD pattern of a Zn0.8Mg0.2O film deposited by spin coating on a Si substrate and annealed at 50...
A model for the band tails distribution at 20 K in Zn1−xMgxO films with the x value composition of ...
PL spectra of Zn0.85Mg0.15O films by spin coating (curve 1) and aerosol spray pyrolysis (curve 2) m...
Current–voltage characteristics in dark and under UV illumination for a p-Si/n-Zn0.9Mg0.1O heterost...
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Current–voltage characteristics in dark and under UV illumination for a p-Si/n-Zn0.6Mg0.4O heterost...
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Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75
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