2 article(s) from Valentini, Antonio
Figure 1: (a) Schematic front view and (b) side view of the Si substrate produced by Fondazione Bruno Kessler...
Figure 2: (a) Scanning electron microscopy (SEM) image of MWCNT samples grown on the implantation area. The i...
Figure 3: Dark current comparison of the Si substrate and the CNT–Si heterojunction.
Figure 4: (a) Details of the dark current around the threshold voltage with a curve fit. (b) C–V plot of the ...
Figure 5: (a) Photocurrent induced by a 730 nm continuous wave, low power light source at various illuminatio...
Figure 6: (a) Dark current and photocurrent tunneling in a CNT–Si heterojunction under 378 nm light illuminat...
Figure 1: Schematic image of the two device layouts used: single face sample (SFS) and double face sample (DF...
Figure 2: TEM micrographs of CNTs dispersion spray obtained by means of: the ultrasonic atomizer a); the airb...
Figure 3: SEM image of the MWCNT film on a semi-insulating gallium arsenide substrate.
Figure 4: Dark-current–voltage characteristics for the SFS, DFS and ITO/GaAs/Ti/Au photodetector configuratio...
Figure 5: Absolute quantum efficiency trend in the visible light range, calculated at a bias voltage of −6 V ...
Figure 6: Absolute quantum efficiency trend in the UV range, calculated at a bias voltage of −6 V for the dev...
Figure 7: Responsivity trend of GaAs and CNTs based photodetectors.
Figure 8: Normalized photocurrent spectra measured at: (a) negative voltages, (b) positive voltages applied t...
Figure 9: Photocurrent as a function of the relative monochromatic light intensity at λ = 800 and 890 nm for ...