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1 article(s) from Vredenbregt, Edgar J D

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

Thomas Henning Loeber,
Bert Laegel,
Meltem Sezen,
Feray Bakan Misirlioglu,
Edgar J. D. Vredenbregt and
Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

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Figure 1: (a) SEM images of Pt deposited with Cs⁺ ions at 16, 8, 5, and 2 kV on Si. The upper part of the ima...

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Figure 2: SEM and EDS analysis of a Pt layer deposited at 2 kV with Cs⁺ ions. The SEM image shows an overview...

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Figure 3: SRIM simulation showing the penetration of Ga⁺ and Cs⁺ ions into a Si substrate at different accele...

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Figure 4: Pt growth rate vs ion current density for different acceleration voltages of Cs⁺ and Ga⁺ ions. As a...

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Figure 5: TEM-EDS mapping for the Pt deposit induced with 16 kV 54 pA Cs⁺.

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Figure 6: Cs⁺-induced Pt composition data. Other than for the 8 kV 10 pA data, 54 pA was used for deposition ...

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Figure 7: Bright-field images of Cs⁺-induced Pt deposit and Pt grain size data for different acceleration vol...

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Figure 8: (a) Structure for the resistivity measurements consisting of four Cr electrodes and the 35 μm by 1....

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Figure 9: (a) Resistivity of Ga⁺-induced Pt deposits using the same current density and acceleration voltage....

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Published 16 Jun 2025

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