2 article(s) from Yang, Wanli
- Full Research Paper
- Published 06 Dec 2019
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Figure 1: Surface views, by scanning electron microscopy (SEM) of 70 nm (a) and 100 nm (b) thick annealed Sb2S...
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Figure 2: S L2,3 XES spectra of two Sb2S3 films, as-deposited (“as-dep.”, blue) and after post-deposition tre...
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Figure 3: (a) Effect of Sb2S3 absorber thickness on J–V curves at AM1.5G. (b) EQE of solar cells and transmit...
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Figure 4: SEM cross-section of the best-performing 5.5% PCE solar cell (100 nm Sb2S3) and the corresponding d...
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Figure 5: Photoconversion parameters of 100 nm Sb2S3 solar cells under illumination at AM1.5G as a function o...
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Figure 6: Photoconversion parameters of (≈100 nm Sb2S3) solar cells at AM1.5G as a function of storage time. ...
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Figure 7: Photoconversion parameters of 100 nm Sb2S3 solar cells without aging (black dots) or after 180 days...
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Supp. Info
- Full Research Paper
- Published 06 Sep 2019
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Figure 1: Three configurations of a piezoelectric p–n junction: 1) R-C stands for the piezoelectric p–n junct...
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Figure 2: Quasi-electrostatic analysis of a mechanically loaded piezoelectric p–n junction under a bias volta...
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Figure 3: Comparison of I–V characteristics obtained from our model and the Shockley model under (a) forward-...
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Figure 4: (a) I–V characteristics of a piezoelectric p–n junction under different loadings; (b) NEMC distribu...
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Figure 5: (a) Current density as a function of applied tensile stress under two constant forward-bias voltage...
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Figure 6: (a) I–V characteristics of a piezoelectric p–n junction under reverse-bias voltages and different a...
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Figure 7: Positive current density under a reverse-bias voltage. (a) Current density under different applied ...
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Figure 8: I–V characteristics for different loading locations under constant applied stress: (a) σ = −10 MPa;...
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Figure 9: I–V characteristics of a CdS p–n junction with different doping concentrations exposed to mechanica...
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