Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

• Patrik Rath,
• Svetlana Khasminskaya,
• Christoph Nebel,
• Christoph Wild and
• Wolfram H.P. Pernice

Beilstein J. Nanotechnol. 2013, 4, 300–305, doi:10.3762/bjnano.4.33

• interferometric measurement to allow for precise thickness monitoring. Because the growth rate is moderate and reproducible, the final film thickness can be controlled with high precision. After growth, the samples are cleaned in concentrated HNO3/H2SO4 to remove remaining surface contamination. Following the

Influence of the diameter of single-walled carbon nanotube bundles on the optoelectronic performance of dry-deposited thin films

• Kimmo Mustonen,
• Toma Susi,
• Antti Kaskela,
• Patrik Laiho,
• Ying Tian,
• Albert G. Nasibulin and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2012, 3, 692–702, doi:10.3762/bjnano.3.79

• sonication (cutting), acid cleaning (unintentional doping) or surfactant-based dispersions (residual surface contamination) [13][14]. Characteristic features have been explored previously by geometric scaling arguments and by comparing the performance of SWCNT films fabricated by different synthesis and

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• devices [6], nanowire bridges [7], nanobelt network films [8], vertical nanowire arrays [9], and flexible nanowire sheets [10]. These nanostructures are normally exposed to air for measurement, neglecting the possible surface contamination caused by absorption of other molecules from the ambient

Femtosecond time-resolved photodissociation dynamics of methyl halide molecules on ultrathin gold films

• Mihai E. Vaida,
• Robert Tchitnga and
• Thorsten M. Bernhardt

Beilstein J. Nanotechnol. 2011, 2, 618–627, doi:10.3762/bjnano.2.65

• ][18][40]. Prior to deposition of the gold film, the surface was cleaned by heating the Mo(100) crystal to 2000 K by means of electron bombardment. Subsequently, the surface temperature was ramped down to 1000 K. In order to avoid the surface contamination, the Mo crystal was held at 1000 K by