Functionalised zinc oxide nanowire gas sensors: Enhanced NO₂ gas sensor response by chemical modification of nanowire surfaces

• Eric R. Waclawik,
• Jin Chang,
• Andrea Ponzoni,
• Isabella Concina,
• Dario Zappa,
• Elisabetta Comini,
• Nunzio Motta,
• Guido Faglia and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2012, 3, 368–377, doi:10.3762/bjnano.3.43

• -functionalisation (and gas-testing) conditions. In terms of an electronic effect, THMA (and DT) binding led to an increase in free-electron carrier concentration in ZnO, reflected in the increased conductivity of the functionalised nanowire gas sensors (Table 1). In terms of gas response, there are several ways in

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

• Debashis De,
• Sitangshu Bhattacharya,
• S. M. Adhikari,
• A. Kumar,
• P. K. Bose and
• K. P. Ghatak

Beilstein J. Nanotechnol. 2011, 2, 339–362, doi:10.3762/bjnano.2.40

• quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light

• thermoelectric power G can be written under the condition of carrier degeneracy [25] as Using Equation 23 and Equation 24, one obtains Therefore, we can experimentally determine LD by knowing the experimental curve of G versus carrier concentration at a fixed temperature. It is evident that the DSL for a system

• transport under such conditions. The Fermi energy is again determined by the carrier energy spectrum and the carrier concentration and therefore, these two features would determine the dependence of the EMM in degenerate materials on the degree of carrier degeneracy. In recent years, the EMM in such