Nanostructure sensitization of transition metal oxides for visible-light photocatalysis

• Hongjun Chen and
• Lianzhou Wang

Beilstein J. Nanotechnol. 2014, 5, 696–710, doi:10.3762/bjnano.5.82

• –CdS heterostructures and found that the hydrogen evolution rate over ZnO disk–CdS nanoparticle heterostructures is 2.8 times higher than the hydrogen evolution rate of the ZnO rod–CdS nanoparticle because photoexcited electron–hole separation is significantly enhanced by polar interfaces [35] and the

• CdSe to TiO2 via oxygen vacancy states mediated by N-doping [39][40]. There are also a large number of heterostructures in literature consisting of quantum dots and transition metal oxides, for instance, CdS/CdSe co-sensitized TiO2 [41], CdTe or CdTe/CdSe quantum dots on TiO2 nanotube arrays [42][43

• evaluation of size dependent electron transfer rates in CdSe–TiO2 semiconductor heterostructures [56]. Based on femtosecond transient absorption measurement it was found that the CB of CdSe quantum dots become more negative and the energy difference between the CB of CdSe and TiO2 is much larger with

Enhanced photocatalytic activity of Ag–ZnO hybrid plasmonic nanostructures prepared by a facile wet chemical method

• Sini Kuriakose,
• Vandana Choudhary,
• Biswarup Satpati and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2014, 5, 639–650, doi:10.3762/bjnano.5.75

• because of the presence of many small crystals and suggests the crystalline nature of heterostructures. The SAD pattern further confirms the formation of crystalline hexagonal phase of Ag–ZnO hybrid nanostructures. The high-resolution TEM image of ZnO nanostructures in Figure 3b clearly shows lattice

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on

• interface effects occurring in oxides heterostructures [2]. In the last decades, their study has revealed the presence of unexpected properties, such as superconductivity [3][4], metallicity [5][6] and magnetism [7], which cannot be ascribed to any of the constituent phases taken singularly. Many, sometimes

• urgent need for a synergetic cross-fertilization of the chemistry and physics approaches. Recognizing this, researchers at the Max-Planck Institute for Solid State Research (MPI-FKF) have pursued a long-standing program to synthesize and investigate epitaxial metal oxide thin films and heterostructures

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Grzegorz Luka,
• Lukasz Wachnicki,
• Sylwia Gieraltowska,
• Krzysztof Kopalko,
• Eunika Zielony,
• Piotr Bieganski,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2014, 5, 173–179, doi:10.3762/bjnano.5.17

• . Experimental In this work, we investigate n-type ZnO/p-type Si heterostructures. P-type (100) silicon wafer with a resistance of 2.32 Ω cm was cut into pieces of the size of 0.5 cm2. Cut silicon pieces were cleaned in 2-propanol, acetone and deionized water for 5 minutes by using an ultrasonic cleaner. Then

• characteristics for the ZnO:Al/ZnONR/Si/Al heterostructures measured under dark (top) and under light conditions (down). SEM images of the three investigated types of structures with different surface morphologies. External quantum efficiency of the PV structures of samples A, B and C based on zinc oxide nanorods

• . Average sizes of ZnO NRs and ZnO NRs covered ZnO:Al grown at different pH values. Electrical parameters of investigated PV structures grown on p Si substrates. Photovoltaic parameters for the investigated heterostructures. Acknowledgements This work was partially supported by the European Union within

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• approximately 700 mV when increasing the temperature of the oxide annealing (Figure 7). Figure 8 shows the photocurrent–potential curves recorded under visible-light illumination of In2O3(200)/CdS and In2O3(400)/CdS heterostructures (curves 3 and 4) in an S2−-containing electrolyte. For comparison, similar

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• transport across the kink lines. We finally consider pseudo-ribbon-based heterostructures and propose that such structures present a novel approach for band gap engineering in nanostructured graphene. Keywords: adsorption and reactivity; curvature effects; DFT calculations; electronic transport; graphene

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• of dopant intentionally to the Au catalyst particle [22]. Much more common and effective is to add a gaseous dopant, such as PH3, B2H6 or B(CH3)3, to the precursor gas feed during growth. Thus, for example, p–i–n+-type doped Si-NW heterostructures with a resistivity of a few mΩ·cm have been achieved