Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Grzegorz Luka,
• Lukasz Wachnicki,
• Sylwia Gieraltowska,
• Krzysztof Kopalko,
• Eunika Zielony,
• Piotr Bieganski,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2014, 5, 173–179, doi:10.3762/bjnano.5.17

• . Experimental In this work, we investigate n-type ZnO/p-type Si heterostructures. P-type (100) silicon wafer with a resistance of 2.32 Ω cm was cut into pieces of the size of 0.5 cm2. Cut silicon pieces were cleaned in 2-propanol, acetone and deionized water for 5 minutes by using an ultrasonic cleaner. Then

• characteristics for the ZnO:Al/ZnONR/Si/Al heterostructures measured under dark (top) and under light conditions (down). SEM images of the three investigated types of structures with different surface morphologies. External quantum efficiency of the PV structures of samples A, B and C based on zinc oxide nanorods

• . Average sizes of ZnO NRs and ZnO NRs covered ZnO:Al grown at different pH values. Electrical parameters of investigated PV structures grown on p Si substrates. Photovoltaic parameters for the investigated heterostructures. Acknowledgements This work was partially supported by the European Union within

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• approximately 700 mV when increasing the temperature of the oxide annealing (Figure 7). Figure 8 shows the photocurrent–potential curves recorded under visible-light illumination of In2O3(200)/CdS and In2O3(400)/CdS heterostructures (curves 3 and 4) in an S2−-containing electrolyte. For comparison, similar

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• transport across the kink lines. We finally consider pseudo-ribbon-based heterostructures and propose that such structures present a novel approach for band gap engineering in nanostructured graphene. Keywords: adsorption and reactivity; curvature effects; DFT calculations; electronic transport; graphene

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• of dopant intentionally to the Au catalyst particle [22]. Much more common and effective is to add a gaseous dopant, such as PH3, B2H6 or B(CH3)3, to the precursor gas feed during growth. Thus, for example, p–i–n+-type doped Si-NW heterostructures with a resistivity of a few mΩ·cm have been achieved