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Search for "CNFET" in Full Text gives 2 result(s) in Beilstein Journal of Nanotechnology.

Electrical contacts to individual SWCNTs: A review

  • Wei Liu,
  • Christofer Hierold and
  • Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

Graphical Abstract
  • challenges for widespread application of CNFETs are additionally discussed. Keywords: charge carrier transport; CNFET; electrical contact; metal–SWCNT interface; SWCNT; Review Introduction The unique crystalline and electronic structure of single-walled carbon nanotubes (SWCNTs) afford extraordinary
  • [9]. Recently, the concept of a CNFET-based single processor was successfully implemented by Shulaker et al. [10]. These achievements reflect the great progress in fabrication technology that is advancing carbon nanotube technology closer to reality. For SWCNT-based devices, the nanotubes must be
  • can be estimated as where and represent the work function of metal and SWCNT, respectively, and Eg is the band gap of the SWCNT, which is inversely proportional to its diameter (approximated as 0.71 ≈ 1.1/d [19][20][21]). For a CNFET with a Schottky barrier (SB) at the contacts, the electrical
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Published 21 Nov 2014

Advances in NO2 sensing with individual single-walled carbon nanotube transistors

  • Kiran Chikkadi,
  • Matthias Muoth,
  • Cosmin Roman,
  • Miroslav Haluska and
  • Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

Graphical Abstract
  • the gate voltage is to change the width of the Schottky barrier, which controls the current through the device. Carbon nanotube transistors often operate as Schottky-barrier field-effect transistors because the back-gated architecture that is typically employed for CNFET gas sensors covers the entire
  • architecture, with suspended or on-substrate tubes, and passivated or unpassivated contacts have been reported (Figure 1). The conductivity of a CNFET can be influenced by surface adsorbates. In particular, the adsorption of electron-withdrawing gases, such as NO2, or electron-donating gases such as NH3 can
  • mechanisms behind the device response. They reported that the CNFET responded to gas exposure by showing a large shift of the transfer (Id–Vg) characteristics, with the direction of the shift dependent on the gas type. The remarkable feature of the observations by Kong et al. [7] is that the nanotubes were
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Published 20 Nov 2014
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