A simple approach to the synthesis of Cu_1.8S dendrites with thiamine hydrochloride as a sulfur source and structure-directing agent

• Xiaoliang Yan,
• Sha Li,
• Yun-xiang Pan,
• Zhi Yang and
• Xuguang Liu

Beilstein J. Nanotechnol. 2015, 6, 881–885, doi:10.3762/bjnano.6.90

• favor of the formation of Cu3BiS3 dendrites [16]. Conclusion A hydrothermal process was used for a facile and environmental-friendly synthesis of Cu1.8S with thiamine hydrochloride as a sulfur source and water as the solvent. Cu1.8S dendrites were obtained after a reaction time of 24 h. The length of

Junction formation of Cu₃BiS₃ investigated by Kelvin probe force microscopy and surface photovoltage measurements

• Fredy Mesa,
• William Chamorro,
• William Vallejo,
• Robert Baier,
• Thomas Dittrich,
• Alexander Grimm,
• Martha C. Lux-Steiner and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2012, 3, 277–284, doi:10.3762/bjnano.3.31

• 10.3762/bjnano.3.31 Abstract Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs

• to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function

• distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate