Beilstein J. Nanotechnol.2021,12, 984–994, doi:10.3762/bjnano.12.74
University, 70200, Karaman, Turkey Department of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, Turkey 10.3762/bjnano.12.74 Abstract In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution
transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and
p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are
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Figure 1:
(a) Schematic illustration and (b) band diagram of the fabricated Au/CuNiCoS4/p-Si photodiode.