Beilstein J. Nanotechnol.2023,14, 552–564, doi:10.3762/bjnano.14.46
University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland 10.3762/bjnano.14.46 Abstract The results of comparative studies on the fabrication and characterization of GaN/Ag
substrates were examined regarding their optical properties using UV–vis spectroscopy and regarding their morphology using scanning electron microscopy. SERS properties of the fabricated GaN/Ag substrates were evaluated by measuring SERS spectra of 4-mercaptobenzoic acid molecules adsorbed on them. For all
PLD-made GaN/Ag substrates, the estimated enhancement factors were higher than for MS-made substrates with a comparable thickness of the Ag layer. In the best case, the PLD-made GaN/Ag substrate exhibited an approximately 4.4 times higher enhancement factor than the best MS-made substrate.
Keywords
PDF
Figure 1:
Overview of the fabrication process of GaN/Ag substrates.