Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• achieved by selective ion sputtering in thin film transistors has also been observed in He+-irradiated InGaZnO devices [27]. This irradiation-induced carrier activation depends not only on the fluence of the ion beam, but also on the absolute number of defects that can be introduced. Therefore, the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• -panel displays (FPDs). Amorphous InGaZnO (a-IGZO), an outstanding active channel material, is generally adopted in TFTs because of its high electron mobility, great environmental/thermal stability, and preparation versatility. The enhanced mobility of a-IGZO originates from the fact that the electrical

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of

• . Keywords: active layer thickness; gate bias; illumination stress; InGaZnO; photoleakage current; thin-film transistors; Introduction Over the last decade, the amorphous oxide-based semiconductor thin-film transistors (AOS TFTs) have attracted global attention for use in advanced display technologies due