Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• Dirac point and the Fermi level shows that approximately one electron is transferred per adsorbed K atom. The doping properties were also explored for different transition metal clusters (Ti, Fe and Pt) deposited on graphene by molecular beam epitaxy (MBE) [30]. The Ti and Fe metal clusters were found

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• MBE. From the experimental point of view, the synthesis of free-standing NCs will not be covered within this review. However, those issues are visited in Section III of this paper, which deals with the first principles modelling of the NCs. II.1 Magnetron co-sputtering This is basically a technique

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• Federico Baiutti Georg Christiani Gennady Logvenov Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany 10.3762/bjnano.5.70 Abstract In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently

• briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on

• based on the ALL-oxide MBE technique, which allows for the synthesis of structures of the best quality, together with the possibility to operate a compositional control at the most accurate level, possibly down to the single atomic layer [13]. The purpose is to provide new insights in the mechanisms

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• , sputter erosion and atom deposition are similar processes. A continuum model for the mound formation in molecular beam epitaxy (MBE) predicts a coarsening exponent of 0.25 [21], which is very close to the measured values. The pattern exhibits a preferential orientation along the direction (Figure 2d and

Tuning the properties of magnetic thin films by interaction with periodic nanostructures

• Ulf Wiedwald,
• Felix Haering,
• Stefan Nau,
• Carsten Schulze,
• Herbert Schletter,
• Denys Makarov,
• Alfred Plettl,
• Karsten Kuepper,
• Manfred Albrecht,
• Johannes Boneberg and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 831–842, doi:10.3762/bjnano.3.93

• the magnetic behavior of the percolated film is discussed in the following sections. After preparation, the Au particle assemblies were introduced in a molecular beam epitaxy (MBE) chamber equipped with an e-beam evaporator loaded with Co and Pt (purity greater than 99.99%). The multilayer stack [Co

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• substrates with an R450 molecular beam epitaxy (MBE) system from DCA Oy, Finland. The flux was determined by beam equivalent pressures (BEP) for all source materials. The partial Ga pressure was kept nearly constant between ≈1.60 and ≈1.89 × 10−7 hPa, for each individual growth process. Depending on the