Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices. Keywords: electrostatics; MEMS; microfluidics; NEM switches; pull-in; Introduction It has become

• structure of the flexible devices. Nanoelectromechanical (NEM) switches made of carbon nanotubes (CNTs) [2][3][4], graphene (GR) [5][6][7], nanowires (NWs) [8][9][10], and other flexible materials are the most basic devices for a variety of component and system level applications, such as low-loss switches

• , phase shifts, and relays. In this paper, the state of the art of electrostatic pull-in phenomena in flexible devices is discussed, and the influence of different electrode structures in NEM switches is classified and discussed. In addition, the applications of NEM switches in radio frequency (RF

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects

• demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed. Keywords

• : nanocontacts; nanoelectromechanical switches; nanowires; NEM; reliability; Review Introduction Nanoelectromechanical (NEM) switches represent a class of nanoscale devices, integrating both electrical and mechanical functionality of nanostructures to process external stimuli applied to the device and

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• . The quantum yield is a quantity that, in principle, must be independent on the number of absorbed photons [1]. In assumption that the internal quantum efficiency, ηI = τPL/τr, scales with the barrier thickness x in the same way as PL QY [5] (η = Nem/Nabs), i.e., the fraction of bright NCs Nem does not

Negative differential electrical resistance of a rotational organic nanomotor

• Hatef Sadeghi,
• Sara Sangtarash,
• Qusiy Al-Galiby,
• Rachel Sparks,
• Steven Bailey and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 2332–2337, doi:10.3762/bjnano.6.240

• transportation [5][6], molecule sorting [7][8], imaging [9] and sensing [10][11]. In contrast to biological machines, which convert energy into directed motion by moving out of thermodynamic equilibrium [12][13][14][15], artificially designed nanoelectromechanical (NEM) motors operate by moving towards

• thermodynamic equilibrium. Many examples of artificial NEM devices use directed motion [16][17][18][19][20][21][22][23][24][25][26]. For example, oscillators with frequencies in excess of 1 GHz have been constructed from multiwalled carbon nanotubes (MWCNT), where the telescoping nature of the inner carbon

• aim is to demonstrate that this coupling between a controlled geometry and electrical properties can lead to desirable nonlinear current–voltage relations and negative differential resistance (NDR). As a specific example that demonstrates the general principle, we analyse the molecular-scale NEM shown