Quantum circuits with SINIS structures

• Mikhail Tarasov,
• Mikhail Fominskii,
• Aleksandra Gunbina,
• Artem Krasilnikov,
• Maria Mansfeld,
• Dmitrii Kukushkin,
• Andrei Maruhno,
• Valeria Ievleva,
• Mikhail Strelkov,
• Daniil Zhogov,
• Konstantin Arutyunov,
• Vyacheslav Vdovin,
• Vladislav Stolyarov and
• Valerian Edelman

Beilstein J. Nanotechnol. 2025, 16, 1931–1941, doi:10.3762/bjnano.16.134

• W·Hz−1/2. The receiver in a 3He cryostat with an optical window was mounted at the Nasmyth focus of the BTA and tested at a temperature of 260 mK with a IMPATT diode radiation source. Keywords: Big Telescope Alt-azimuthal; electron coolers; microwave detectors; micro- and nanotechnology; NIS tunnel

• tunnel junction In tunnel structures, the barrier is a dielectric layer between two metal films (often the oxide layer on the surface of the first metal layer is used as a dielectric). The first experimental study of a tunnel junction was carried out in 1960 [21] for an aluminum–aluminum oxide–lead

• junction; superconducting tunnel junctions; Introduction Modern superconducting electronics is moving towards lower temperatures, lower noise levels, and higher sensitivity, which can be achieved at sub-Kelvin temperatures using aluminum-based tunnel junctions. One group of devices, such as