Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

• Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

• Christian Godet Institut de Physique de Rennes, UMR 6251 CNRS - Université de Rennes 1, 35042 Rennes Cedex, France 10.3762/bjnano.6.60 Abstract Dynamic properties of n-alkyl monolayers covalently bonded to Si(111) were studied by broadband admittance spectroscopy as a function of the temperature

• ] conformational changes on electron transport properties have rarely been explicitly described. In this context, this admittance spectroscopy study emphasizes a collective dynamic behavior of linear saturated (n-alkyl) chains tethered to Si(111). Dynamic properties are very sensitive to structure and conformation

• of the OML. In contrast with alternative dynamic probes, such as nuclear magnetic resonance, which are limited by a poor signal-to-noise ratio and require functionalization of 3D nanoparticles or porous solids [3], admittance spectroscopy is sensitive to 0.3 picomoles of carboxylic acid dipoles [40

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS) is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The

• methods is verified by experimental measurements from an n-type SiNW FET. Keywords: admittance spectroscopy; excitation design; frequency characterization; frequency response; silicon nanowire; Introduction Recent development in sensing biochemical molecules has been rapid. Among many sensing

• logarithmic averaging procedure (Equation 4) was then applied to each data period. Figure 11 shows the computed frequency responses (admittance spectroscopy) when the gate voltage was changed from 1.0 V to 3.0 V. The figure shows an almost linear drop in the gain curve when the gate voltage is below 2.0 V