Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• [112] and is thus a candidate for a spin qubit. Other modeling based on DFT and constrained DFT attributes the SPE to a VNCB defect [104]. In [97] few layers of exfoliated h-BN were studied under cathode-luminescence (CL) combined with a Hanbury Brown and Twiss interferometer to identify their SPE in

• on PL in h-BN. Very likely, this spreading of shapes and positions possibly originates from the many relevant parameters that are not fully under control in the preparation of the material and the way the experiments are conducted. In the first experiments, ensemble measurements using cathode

• -luminescence and optical spectroscopy in deep ultraviolet [91][93][94] were used for the characterization of stacking faults and point defects. More recently an aberration-corrected high-resolution transmission electron microscopy technique has been used to resolve atomic defects in a freestanding single layer

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO

• . Keywords: atomic force microscopy; cathode luminescence; scanning electron microscopy; silicon solar cells; transparent conducting oxide; X-ray diffraction; ZnO; Introduction Transparent conductive oxides (TCOs), with both high electrical conductivity and optical transparency, could be used as a

• by LPCVD. These three samples are characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The grain structure, average grain size, and associated strains are shown to agree well with the