Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• methods and techniques to achieve this have been developed to include chemical vapour deposition (CVD), using NH3 as a precursor, arc discharge [23], embedded nitrogen and carbon sources within a metal substrate [24], ion implantation [25][26], ammonia [27] or nitrogen plasma [28][29] treatments, and

• ]. They discovered that graphene grown via chemical vapour deposition (CVD) in the presence of ammonia (NH3) naturally incorporates nitrogen atoms as substitutional so-called ’graphitic’ dopants (see Figure 1A) into the crystal, and with a distinct sublattice segregation of dopants. Indeed further

Highly NO₂ sensitive caesium doped graphene oxide conductometric sensors

• Carlo Piloto,
• Marco Notarianni,
• Mahnaz Shafiei,
• Elena Taran,
• Dilini Galpaya,
• Cheng Yan and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 1073–1081, doi:10.3762/bjnano.5.120

• processes to make pristine graphene sheets, like chemical vapour deposition, epitaxial growth or mechanical exfoliation [30][31][32][33]. By dispersion and sonication of graphite oxide in aqueous solution or organic solvent, a colloidal suspension of GO sheets is produced. The density of oxygen functional

Gas sensing with gold-decorated vertically aligned carbon nanotubes

• Prasantha R. Mudimela,
• Mattia Scardamaglia,
• Oriol González-León,
• Nicolas Reckinger,
• Rony Snyders,
• Eduard Llobet,
• Carla Bittencourt and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2014, 5, 910–918, doi:10.3762/bjnano.5.104

• charge transport [7], unlike in randomly oriented CNT meshes. Sensors made of aligned CNTs synthesized by plasma enhanced chemical vapour deposition (PECVD), have been reported to exhibit fast and high response at room temperature and detect 10 ppb NO2 when operated at 165 °C. Although the detection of

Fullerenes as adhesive layers for mechanical peeling of metallic, molecular and polymer thin films

• Maria B. Wieland,
• Anna G. Slater,
• Barry Mangham,
• Neil R. Champness and
• Peter H. Beton

Beilstein J. Nanotechnol. 2014, 5, 394–401, doi:10.3762/bjnano.5.46

• , the transfer and removal of monolayer films has been widely adopted by graphene researchers through exfoliation [10] and, for samples grown by chemical vapour deposition, by etching the underlying metal thin film or foil used as a growth substrate [11][12][13]. In a complementary strand of research

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom Imperial College London, Department of Chemistry, London SW7 2AZ, United Kingdom 10.3762/bjnano.5.24 Abstract The catalytic chemical vapour deposition (c-CVD) technique was applied in the synthesis of vertically aligned arrays of

• ) type as compared to the purely ‘base’-type for undoped MWCNTs. Keywords: carbon nanotubes; catalytic chemical vapour deposition; crystallinity; nitrogen doping; vertically aligned nanotube arrays; Introduction The doping of carbon nanotubes (CNTs) with boron [1][2], nitrogen [3][4] or phosphorus [5

• fuel cells [23] or paracetamol sensors [24]. Nitrogen atoms can be incorporated into the CNT lattice trough either in situ or post-treatment strategies [25]. The former techniques are dominant and comprise primarily catalytic chemical vapour deposition (c-CVD) and its variations, which include bias or

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al₂O₃-films

• Jörg Haeberle,
• Karsten Henkel,
• Hassan Gargouri,
• Franziska Naumann,
• Bernd Gruska,
• Michael Arens,
• Massimo Tallarida and
• Dieter Schmeißer

Beilstein J. Nanotechnol. 2013, 4, 732–742, doi:10.3762/bjnano.4.83

• vapour deposition (CVD) like reactions due to remaining TMA precursor within the reactor caused by not optimal purge times as well as a radial non-uniformity of the plasma species are believed to be responsible for the thickness non-uniformity in the PE-ALD process [1]. Growth rate and refractive index

• roughness in the thicker and thinner layers at the same process temperature, the influence of the roughness on the thickness distribution is increased for the thinner layer. Therefore we argue that at lower temperatures the roughness is increased compared to the layers at T > 100°C. Parasitic chemical

Ferromagnetic behaviour of Fe-doped ZnO nanograined films

• Boris B. Straumal,
• Svetlana G. Protasova,
• Andrei A. Mazilkin,
• Thomas Tietze,
• Eberhard Goering,
• Gisela Schütz,
• Petr B. Straumal and
• Brigitte Baretzky

Beilstein J. Nanotechnol. 2013, 4, 361–369, doi:10.3762/bjnano.4.42

• between one finds the third group of the data, namely obtained for the samples produced by chemical vapour deposition (CVD), solution combustion or wet chemistry methods. They have intermediate properties and can be either paramagnetic or FM [56][57][58][59][60][61][62][63][64][65][66]. We used different

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

• Patrik Rath,
• Svetlana Khasminskaya,
• Christoph Nebel,
• Christoph Wild and
• Wolfram H.P. Pernice

Beilstein J. Nanotechnol. 2013, 4, 300–305, doi:10.3762/bjnano.4.33

• Materials, Tullastr. 72, 79108 Freiburg, Germany 10.3762/bjnano.4.33 Abstract Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD) on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• the <11−20> direction. [22]. A 30 nm thick SiO2 layer deposited by plasma-enhanced chemical vapour deposition was used as the gate dielectric. After deposition of the gate oxide, a POA annealing at 1150 °C was performed under an N2O atmosphere. MOSFET devices were fabricated on two different surfaces

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• Department of Electronic Engineering, University of Catania, Viale A. Doria 6, 95125 Catania, Italy Department of Chemistry, University of Catania, Catania, Italy STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy 10.3762/bjnano.4.24 Abstract Chemical vapour deposition (CVD) on catalytic

• chemical vapour deposition (CVD) on catalytic metals [9], are more suitable for large-area applications, as has been demonstrated in the past few years. Considering the case of CVD, the two main catalytic metals used for graphene growth are nickel and copper [16]. In the case of CVD growth on copper foils

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• - and nanostructures in addition are synthesized for applications in solar cells, flat-panel displays, and sensorics. The most common approaches to synthesize copper micro- and nanostructures include electrodeposition, chemical vapour deposition, electroless deposition, and solution growth [67][68][69

• photovoltaic applications. CdTe and CdS rods are mostly synthesized by chemical vapour deposition, and sol–gel processes. Electrodeposition of stoichiometric CdTe nanowires with diameters between 80 nm and 1 μm was reported by Enculescu et al. [95]. In addition to SEM, TEM, EDX, and XRD characterization, they

• availability, inertness, and compatibility with silicon-based technical processing, Si nanowires have a broad range of applications from sensorics, to biotechnology, photonics, IR-sensorics, and many others. Si wires have been prepared by a large variety of deposition techniques, including chemical vapour

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon

Conducting composite materials from the biopolymer kappa-carrageenan and carbon nanotubes

• Ali Aldalbahi,
• Jin Chu,
• Peter Feng and
• Marc in het Panhuis

Beilstein J. Nanotechnol. 2012, 3, 415–427, doi:10.3762/bjnano.3.48

• nanotubes (MWNTs) produced by catalytic chemical vapour deposition were obtained from Nanocyl S.A. (Belgium, lot # 090901). Single-walled carbon nanotubes (SWNTs), produced by high-pressure decomposition of carbon monoxide (HiPCO process), were purchased from Unidym Inc. (USA, lot # P0348). Glycerin was

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

• Luca Camilli,
• Manuela Scarselli,
• Silvano Del Gobbo,
• Paola Castrucci,
• Eric Gautron and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

• advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs) by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been

• interesting for fundamental studies as well as practical applications [1]. Among the various synthesis techniques, chemical vapour deposition is preferred in the field of electronics, since it allows for the direct growth of CNTs on substrates [2]. CNTs are generally synthesized on Si or Si/SiO2 substrates

• geometry gives a photocurrent intensity and an external quantum efficiency (EQE) value much higher than those measured in the in-plane configuration. Results and Discussion In Figure 1 the chemical vapour deposition chamber used to grow the CNTs is displayed. The stainless-steel substrate is mounted on a

Electron-beam patterned self-assembled monolayers as templates for Cu electrodeposition and lift-off

• Zhe She,
• Andrea DiFalco,
• Georg Hähner and
• Manfred Buck

Beilstein J. Nanotechnol. 2012, 3, 101–113, doi:10.3762/bjnano.3.11

• deposition techniques [18], which also include evaporation [19][20], chemical vapour deposition (CVD) [21][22] and electroless deposition [22][23][24], electrodeposition [25][26][27][28] offers interesting perspectives, in particular at the nanoscale, due to the level of control over the deposition process

Template-assisted formation of microsized nanocrystalline CeO₂ tubes and their catalytic performance in the carboxylation of methanol

• Jörg J. Schneider,
• Meike Naumann,
• Christian Schäfer,
• Armin Brandner,
• Heiko J. Hofmann and
• Peter Claus

Beilstein J. Nanotechnol. 2011, 2, 776–784, doi:10.3762/bjnano.2.86

• polymer-templating method was investigated in an effort to reduce such agglomeration [1][7][8][9][10][11]. Nanosized ceria can be synthesized by methods such as chemical vapour deposition (CVD), spray pyrolysis, hydrothermal synthesis or electrosynthesis [1][2][9]. These approaches lead to particulate

Generation and agglomeration behaviour of size-selected sub-nm iron clusters as catalysts for the growth of carbon nanotubes

• Ravi Joshi,
• Benjamin Waldschmidt,
• Jörg Engstler,
• Rolf Schäfer and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2011, 2, 734–739, doi:10.3762/bjnano.2.80

• crucially their physical and electronic properties. High quality single-walled and double-walled CNTs are currently prepared on a large scale with the aid of nm-sized transition metal catalysts, by using high-temperature chemical vapour deposition (CVD) techniques above 750 °C, despite the fact that several

• application of a high voltage pulse to the 90° mirror, which was aligned to the target (11). The incident energy of the mass-selected clusters was 2550 eV with an energy spread of approximately 150 eV (FWHM). Chemical vapour deposition of CNTs A 10 nm thick aluminium buffer layer was deposited by means of