Vibration-mediated Kondo transport in molecular junctions: conductance evolution during mechanical stretching

• David Rakhmilevitch and
• Oren Tal

Beilstein J. Nanotechnol. 2015, 6, 2417–2422, doi:10.3762/bjnano.6.249

• ) Differential conductance vs applied bias voltage (dI/dV vs V) measured for a silver/copper–phthalocyanine (Ag/CuPc) molecular junction. The spectrum exhibits a zero-bias Kondo peak accompanied by vibration-mediated Kondo side peaks [23]. Inset: A vibration-induced differential conductance step occurring in the

Sub-monolayer film growth of a volatile lanthanide complex on metallic surfaces

• Hironari Isshiki,
• Jinjie Chen,
• Kevin Edelmann and
• Wulf Wulfhekel

Beilstein J. Nanotechnol. 2015, 6, 2412–2416, doi:10.3762/bjnano.6.248

• interactions. The creation of these commensurate lattices implies that the molecules are transferred onto substrates without decomposition and a relatively strong molecule–substrate interaction is maintained. We took dI/dV spectra on a molecule in a trimer on Au(111) to determine the local density of state

• see the particular distribution of the DOS of the molecules, we performed dI/dV mapping on the trimer. The dI/dV maps at bias voltages of −550 mV, +100 mV, +350 mV and +650 mV, together with their corresponding topographies, are shown in Figure 4b. The corrugation of the DOS on the substrate

• represents the standing waves caused by impurity scattering of the electrons of the surface state [20]. At +350 mV and +650 mV, where the maxima in the dI/dV spectrum were found, the DOS is localized on the molecules, that is, the shape represents the molecular orbitals. These significantly differ from the

Negative differential electrical resistance of a rotational organic nanomotor

• Hatef Sadeghi,
• Sara Sangtarash,
• Qusiy Al-Galiby,
• Rachel Sparks,
• Steven Bailey and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 2332–2337, doi:10.3762/bjnano.6.240

• is shown in Supporting Information File 1, Figure S3. The weighted current (blue curve) from Equation 5 and the NDR (green curve, dI/dV) for applied bias between 0 and 1 V. The prominent NDR features are seen at a bias voltage between 0.0–0.1 V and 0.6–0.7 V for the device. Supporting Information

Enhanced fullerene–Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions

• Michael Paßens,
• Rainer Waser and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2015, 6, 1421–1431, doi:10.3762/bjnano.6.147

• by DFT calculations [29][30]. For reference purposes we first probed the dI/dV spectra of a bright C60 molecule. A typical spectrum showing molecular resonances of bright C60 is displayed in Figure 6 (blue). It is in full agreement with dI/dV spectra reported in literature for bright C60 embedded in

• of en-bright C60, like depicted in Figure 5. The resulting dI/dV-curve is also shown in Figure 6 (red). Obviously the HOMO and LUMO energies are shifted with respect to bright C60 to lower energies and are located at −2.06 eV, 0.60 eV, and 1.8 eV. This shift of the molecular energy levels is in great

• scenarios assumed in literature [43], i.e., a flat Au(111) surface and an adatom contact. Another feature of the dI/dV-spectrum of C60 in the u-R30° domain (Figure 6, inset) has not been discussed so far. There is a relatively broad peak with low intensity just below EF, between 0.0 eV and −0.8 eV, which

Spectroscopic mapping and selective electronic tuning of molecular orbitals in phosphorescent organometallic complexes – a new strategy for OLED materials

• Pascal R. Ewen,
• Jan Sanning,
• Tobias Koch,
• Nikos L. Doltsinis,
• Cristian A. Strassert and
• Daniel Wegner

Beilstein J. Nanotechnol. 2014, 5, 2248–2258, doi:10.3762/bjnano.5.234

• transferred in situ into the cold STM (T = 5 K). All images where taken in constant-current mode. For the tunneling spectra the current I and the differential conductance dI/dV (via lock-in technique, modulation voltage 10–20 mV) were measured simultaneously as a function of sample bias V under open-feedback

• conditions. The bias voltage is always given with respect to the sample, i.e., positive sample bias corresponds to electrons tunneling from occupied electronic states of the tip into unoccupied states of the sample, and V = 0 corresponds to the Fermi energy EF. In good approximation, dI/dV is proportional to

• the local density of states of the sample. Energy-resolved spectral maps (that visualize the spatial distribution of molecular orbitals) were acquired by measuring dI/dV at a fixed bias as a function of lateral position in constant-current mode. For the DFT calculations shown here, Kohn–Sham molecular

STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces

• Amir A. Ahmad Zebari,
• Marek Kolmer and
• Jakub S. Prauzner-Bechcicki

Beilstein J. Nanotechnol. 2013, 4, 927–932, doi:10.3762/bjnano.4.104

• . The differential tunneling conductance (dI/dV) as a function of the sample bias V was obtained numerically from the I–V curves. (a) High resolution STM image on top of a PTCDA island, 25 nm × 25 nm, showing the herringbone structure. (b) STS curves for Ge(001), Ge(001):H and PTCDA molecular island. (c

Charge transport in a zinc–porphyrin single-molecule junction

• Mickael L. Perrin,
• Christian A. Martin,
• Ferry Prins,
• Ahson J. Shaikh,
• Rienk Eelkema,
• Jan H. van Esch,
• Jan M. van Ruitenbeek,
• Herre S. J. van der Zant and
• Diana Dulić

Beilstein J. Nanotechnol. 2011, 2, 714–719, doi:10.3762/bjnano.2.77

• reduction of the noise. The I(V)s of the junction containing ZnTPPdT–Pyr now show sharp step-like features, which are more pronounced than those in Figure 2d. We numerically determined the differential conductance (dI/dV) as displayed in Figure 3c. In the dI/dV curves, the steplike features are visible as

• resonance peaks, which are marked in the figure with arrows of the corresponding color. For clarity, the dI/dV curves are offset vertically, and the dI/dV-curve represented by the black curve is magnified 100 times. The origin of these resonances can be electronic or vibrational [20][21][22]. Independent of

• . Low-temperature I(V) characteristics of junctions exposed to (a) DCM and (b) ZnTPPdT–Pyr. The DCM sample clearly shows vacuum-tunneling behavior. The porphyrin sample exhibits Coulomb blockade and steps. (c) dI/dV of a junction exposed to a ZnTPPdT–Pyr solution; curves are offset vertically for