Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• /bjnano.8.237 Abstract We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds

• stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition. Keywords: dichlorosilacyclohexane; dissociative electron

• . Silacyclohexane (SCH) and dichlorosilacyclohexane (DSCH), shown in Figure 1, are cyclohexane derivatives where one of the carbon atoms is replaced by a silicon atom, and in DCSCH two chlorine atoms are attached to that silicon atom. In a fairly recent gas phase study [35], where these molecules were exposed to