Characterization of electroforming-free titanium dioxide memristors

• John Paul Strachan,
• J. Joshua Yang,
• L. A. Montoro,
• C. A. Ospina,
• A. J. Ramirez,
• A. L. D. Kilcoyne,
• Gilberto Medeiros-Ribeiro and
• R. Stanley Williams

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

• measurements. Electrical characterization of (b) normal Pt/TiO2/Pt and (c) double layer Pt/TiO2−x/TiO2 device, showing the Virgin, OFF (high resistance), and ON (low resistance) states. The normal device exhibits an irreversible forming step, while the double layer structure is able to regain the Virgin state

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• present the work of various leading labs in developing such techniques. Targeting 2-D/3-D resolution, one inevitably needs to look at scanning probe techniques that can be proclaimed to be dominant for electrical characterization and atomic probes that can be viewed as the ultimate in terms of

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• between the two materials. Results and Discussion Microscale electrical characterization The electronic transport properties of the large-area graphene transferred onto the two different substrates have been characterized on the macroscopic scale by electrical measurements on transmission line model (TLM

• bias) [10][11], a p-type doping can be deduced from the electrical characterization of CVD-grown graphene membranes transferred onto SiO2. This doping can probably be ascribed to the adsorbed resist impurities left after transfer. Furthermore, the measured ρc is almost one order of magnitude higher

• value in the absence of interface traps. A similar macroscopic electrical characterization using TLM structures was performed also in CVD graphene transferred onto PEN. In this case, the sheet resistance and specific contact resistance only were measured, whereas an estimate of mobility and carrier

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• . Such epitaxial NWs grow preferentially along the [112] direction, like their B-doped counterparts. The NWs themselves are rod-like, exhibit good crystallinity, and feature no observable defects or stacking faults. To test the activation of the dopants in the NWs, electrical characterization was

Parallel- and serial-contact electrochemical metallization of monolayer nanopatterns: A versatile synthetic tool en route to bottom-up assembly of electric nanocircuits

• Jonathan Berson,
• Assaf Zeira,
• Rivka Maoz and
• Jacob Sagiv

Beilstein J. Nanotechnol. 2012, 3, 134–143, doi:10.3762/bjnano.3.14

• and Figure 3) with Silicon AC160TS semicontact probes (Olympus). The serial CET experiments (Figure 4 and Figure 5) were performed on an NTEGRA Aura SFM system (NT-MDT) specially designed for electrical patterning and structural-electrical characterization of surface architectures [30]. W2C-coated