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Search for "electrical contact" in Full Text gives 57 result(s) in Beilstein Journal of Nanotechnology.

Graphical Abstract
  • electrodeposition conditions were studied in order to obtain mechanically stable nanocones with good electrical contact to the substrate. Electrodeposition by using a CuSO4-based electrolyte in a two electrode configuration, with U = −40 mV leads to a slow growth rate, resulting in a large uniform array of
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Published 17 Dec 2012

Current–voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution

  • Bernd M. Briechle,
  • Youngsang Kim,
  • Philipp Ehrenreich,
  • Artur Erbe,
  • Dmytro Sysoiev,
  • Thomas Huhn,
  • Ulrich Groth and
  • Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 798–808, doi:10.3762/bjnano.3.89

Graphical Abstract
  • end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the
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Published 26 Nov 2012

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

  • César Moreno,
  • Carmen Munuera,
  • Xavier Obradors and
  • Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

Graphical Abstract
  • permitted observation of the complete writing (positives Vtip), reading (small negative Vtip) and erasing (negatives Vtip) process. In our setup, the sample was always grounded and the voltage was applied to the tip. Given the insulating character of the substrates used (SrTiO3), the direct electrical
  • contact to ground was established through a metallic clamp (counter electrode) firmly attached to the film at the sample border (millimetres apart from the tip–surface contact). For topographic images a colour code is commonly used in which bright colours indicate high values and dark means low; however
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Published 06 Nov 2012

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

  • Thomas H. Loeber,
  • Dirk Hoffmann and
  • Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

Graphical Abstract
  • thick p-doped Al0.50Ga0.50As layer was then grown. The sample was capped with a highly p-doped 50 nm thick GaAs layer for optimized electrical contact. The output pulse power versus pump current density characteristics, and the corresponding emission spectrum, are both shown in Figure 5. The emission
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Published 30 Jun 2011

Studies towards synthesis, evolution and alignment characteristics of dense, millimeter long multiwalled carbon nanotube arrays

  • Pitamber Mahanandia,
  • Jörg J. Schneider,
  • Martin Engel,
  • Bernd Stühn,
  • Somanahalli V. Subramanyam and
  • Karuna Kar Nanda

Beilstein J. Nanotechnol. 2011, 2, 293–301, doi:10.3762/bjnano.2.34

Graphical Abstract
  • connection of such CNT arrays in order to use them in, e.g., micro scaled electronic devices. Recently, we have shown that making electrical contact to CNT arrays is indeed possible if such CNT arrays are synthesized over larger substrate areas and display sufficient mechanical stability [24]. Concerning the
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Published 14 Jun 2011

Single-pass Kelvin force microscopy and dC/dZ measurements in the intermittent contact: applications to polymer materials

  • Sergei Magonov and
  • John Alexander

Beilstein J. Nanotechnol. 2011, 2, 15–27, doi:10.3762/bjnano.2.2

Graphical Abstract
  • to metal disks with epoxy glue. An electrical contact between the instrument and the samples was arranged with a wire, which was fixed to a side of the conducting substrate with a drop of silver glue. For KFM and dC/dZ we used Pt-coated Si probes with a stiffness in the 3–40 N/m range and flexural
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Published 06 Jan 2011

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

  • Thomas König,
  • Georg H. Simon,
  • Lars Heinke,
  • Leonid Lichtenstein and
  • Markus Heyde

Beilstein J. Nanotechnol. 2011, 2, 1–14, doi:10.3762/bjnano.2.1

Graphical Abstract
  • connected to a wire, 50 μm in diameter (see Figure 2c). Using this electrical contact, a bias voltage can be applied between tip and sample and a tunneling current It can be measured. It serves as a feedback signal when operating in the STM mode at constant current. While operating in one of the modes, NC
  • electronics. The electrical contact leads to an alignment of the Fermi levels of tip and sample. In Figure 4a tip and sample are not electrically connected, thus, the vacuum levels are equal and the Fermi levels do not align. In Figure 4b tip and sample are electrically connected and electrons from the
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Published 03 Jan 2011
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