En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• key parameters, i.e., growth temperature (660, 760 and 860 °C), composition of the feedstock and time of growth, on morphology and properties of N-CNTs. The presence of nitrogen species in the hot zone of the quartz reactor decreased the growth rate of N-CNTs down to about one twentieth compared to

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Grzegorz Luka,
• Lukasz Wachnicki,
• Sylwia Gieraltowska,
• Krzysztof Kopalko,
• Eunika Zielony,
• Piotr Bieganski,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2014, 5, 173–179, doi:10.3762/bjnano.5.17

• aluminum precursor. The growth temperature was 160 °C and the N2 was used as a purging gas. To obtain a high conductivity of the ZnO film, we mixed ALD cycles. We applied 1 cycle TMA + H2O and 24 cycles of DEZ + H2O to obtain a uniform distribution of Al in the layer. The lowest resistivity was achieved

• for ZnO:Al films with 3% of Al. Further details of the ALD growth process are given in our recent publication [42]. Although the growth temperature was relatively low (160 °C), we achieved a metallic-like conductivity. Concentrations, mobilities and resistivities of ZnO:Al films and Si substrates are

• listed in Table 2. Please note that the low growth temperature – which still facilitates a high conductivity – is important, since we plan to deposit future test devices on transparent foils. Aluminum ohmic contacts to p-type Si were deposited by e-beam evaporation (PVD 75, Kurt Lesker). The obtained

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• traces of air. Thereafter the temperature was ramped up with the samples still outside of the heated zone, under a flow of 100 sccm of He. When the furnace reached the final growth temperature the sample holder was transferred into the growth region with the aid of a magnetic specimen-transport system

• the influence of the growth temperature [30]. After the standard growth duration of 60 min, the sample holder was pulled out of the heating zone with the magnetic specimen-transport system, enabling a very fast cool down of the samples, which still remained in the growth atmosphere. Finally, the

• electron beam lithography, Ni sputter deposition and lift-off techniques. Results and Discussion Single-crystalline and epitaxial Si-NWs were grown by using OCTS as a precursor and Au colloids at a growth temperature of 700 °C, with a pre-annealing of the samples at 800 °C for 30 min. The thus synthesized

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• thin film of Fe catalyst on ITO-coated glass. By investigating the effect of the growth temperature on the nanotube yield and on the ITO layer, we have selected the optimal CVD conditions for the use of such substrates as anodes for P3HT:PCBM solar cells. These process conditions address three of the

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

• Christian Held,
• Thomas Seyller and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2012, 3, 179–185, doi:10.3762/bjnano.3.19

• layer is limited to two or three layers. The layer coverage is controlled by the growth temperature rather than by the duration of the heating cycle [14]. The determination of substrate step heights and of related changes in the graphene coverage has already provided interesting insight into the

Generation and agglomeration behaviour of size-selected sub-nm iron clusters as catalysts for the growth of carbon nanotubes

• Ravi Joshi,
• Benjamin Waldschmidt,
• Jörg Engstler,
• Rolf Schäfer and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2011, 2, 734–739, doi:10.3762/bjnano.2.80

• to the high synthesis temperatures necessary for CNT growth seems unavoidable when such sub-nm small clusters are used. In order to avoid this, a marked reduction in CNT growth temperature, to below 600 °C, is necessary. Experimental Size-selected cluster synthesis A schematic overview of the vacuum

• deposition the TEM grids were transferred into the iron-cluster-source apparatus and the size-selected iron clusters were deposited. After cluster deposition, the TEM grids were placed in the CVD reactor and CNTs were synthesized by a water-assisted chemical vapor deposition method [6][7]. At the growth

• temperature of 750 °C, the ethylene (100 sccm) precursor gas flow was started and a small amount of the carrier gas was bubbled through a water bubbler in order to carry a defined amount of water vapor along with it. The amount of water vapor was monitored by using a commercial water vapour sensor built in

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• –Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled

• QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K. Keywords: V/III flux ratio; GaSb quantum dots; growth temperature; semiconductor laser; Stranski–Krastanov growth; Introduction GaSb quantum dots (QDs) grown on

• (SK) growth, depending on the precise control of the Sb/Ga V/III flux ratio, coverage, and growth temperature. Furthermore these parameters influence dot shape, size and density. The staggered (type-II) band alignment with a large valence band offset provides hole confinement. The electronic states

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

• Bert Stegemann,
• Matthias Klemm,
• Siegfried Horn and
• Mathias Woydt

Beilstein J. Nanotechnol. 2011, 2, 59–65, doi:10.3762/bjnano.2.8

• preparation Single crystals of the vanadium oxide Magnéli phases were grown in vacuum sealed quartz tubes in a gradient furnace. The chemical transport reaction, using TeCl4 as a transport agent took nearly six weeks. The growth temperature was 600 °C. The different phases were prepared by adjusting the

Magnetic nanoparticles for biomedical NMR-based diagnostics

• Huilin Shao,
• Tae-Jong Yoon,
• Monty Liong,
• Ralph Weissleder and
• Hakho Lee

Beilstein J. Nanotechnol. 2010, 1, 142–154, doi:10.3762/bjnano.1.17

• thermal decomposition of precursors. Above a supersaturation level, these monomers then aggregate to induce nucleation and nanoparticle growth. By tuning the growth conditions during this procedure (such as precursor choice, monomer concentration, growth temperature and time), it is possible to control

Low-temperature solution growth of ZnO nanotube arrays

• Ki-Woong Chae,
• Qifeng Zhang,
• Jeong Seog Kim,
• Yoon-Ha Jeong and
• Guozhong Cao

Beilstein J. Nanotechnol. 2010, 1, 128–134, doi:10.3762/bjnano.1.15

• the pH value of the reaction solution played an important role in mediating the growth of ZnO nanostructures. A change in the growth temperature might change the pH value of the solution and bring about the structure conversion of ZnO from nanorods to nanotubes. It was proposed that the ZnO nanorods

• from rods to tubes. In our experiment, the ZnO nanotubes were, however, formed by purposely decreasing the growth temperature during the synthesis, instead of relying on a long-term aging. The SEM images reveal that the top morphology of the ZnO changes from rods to tubes as the growth temperature was

• planes, and thus affect the morphology of ZnO nanorods. In our study, we adopted the same conditions (concentration, temperature and time) as reported [27][28]; however, the tube-shaped ZnO was not attained if we simply set a constant growth temperature during the growth process. It means that the tube