Nanocarrier-integrated multilayer films produced by 3D printing for improved skin adhesion and curcumin photostability

• Thayse Viana de Oliveira,
• Ana Paula Farias Leão,
• Júlia Leão,
• Cesar Liberato Petzhold and
• Ruy Carlos Ruver Beck

Beilstein J. Nanotechnol. 2026, 17, 440–453, doi:10.3762/bjnano.17.30

• stress and rapidly recover its rheological properties once the stress is removed. A recovery value of at least 80% is generally considered acceptable, indicating that the layer-stacking capability remains sufficiently dependent on the material’s original mechanical properties [40]. Initially, a shear

Advancing nanolithography: a comprehensive review of materials for local anodic oxidation with AFM

• Matteo Lorenzoni

Beilstein J. Nanotechnol. 2026, 17, 275–291, doi:10.3762/bjnano.17.19

• . The degree of oxidation increases with higher RH, which enhances the size and reactivity of the water meniscus. The structural and electronic behavior of graphene during LAO is influenced by its layer stacking. As pointed out by Liou and coworkers [20], the inherently 2D nature of these materials

Structural model of silicene-like nanoribbons on a Pb-reconstructed Si(111) surface

• Agnieszka Stępniak-Dybala and
• Mariusz Krawiec

Beilstein J. Nanotechnol. 2017, 8, 1836–1843, doi:10.3762/bjnano.8.185

•  1, the structural model with the lowest surface energy (5hex) is composed of pure hexagonal rings. The model is shown in Figure 2. The atomic structure of the NR is in reversed AB registry with respect to the substrate lattice (Figure 2b). This layer stacking has also been proposed as one of

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• from both fundamental and applied aspects. TG can be obtained by different methods, e.g., by means of graphene folding, graphene layer stacking, thermal decomposition of SiC [9] or chemical vapor deposition (CVD) on metal catalysts [10][11]. Generally speaking, CVD is one of the most common methods to

Controlled supramolecular structure of guanosine monophosphate in the interlayer space of layered double hydroxide

• Gyeong-Hyeon Gwak,
• Istvan Kocsis,
• Yves-Marie Legrand,
• Mihail Barboiu and
• Jae-Min Oh

Beilstein J. Nanotechnol. 2016, 7, 1928–1935, doi:10.3762/bjnano.7.184

• /LDH (GL) hybrids prepared under various GMP/LDH molar ratios. At high GMP ratio (Figure 1c–e), the XRD patterns revealed amorphous structures, which was attributed to the disordered layer stacking of LDH due to the large quantity of organic moieties (GMP) as shown previously [15]. At GMP/LDH molar

• ratio of 1:2 and 1:4 (Figure 1f and Figure 1g, respectively), (00l) peaks shifted to lower angles as compared to pristine LDH, indicating ordered layer stacking with interlayer GMP moiety. However, excessive loading of LDH resulted in the decrease of intercalated peaks and increase of pristine peaks

On the reticular construction concept of covalent organic frameworks

• Binit Lukose,
• Agnieszka Kuc,
• Johannes Frenzel and
• Thomas Heine

Beilstein J. Nanotechnol. 2010, 1, 60–70, doi:10.3762/bjnano.1.8

• ; energetic and electronic properties; layer stacking; XRD; Introduction In the past decade, considerable research efforts have been expended on nanoporous materials due to their excellent properties for many applications, such as gas storage and sieving, catalysis, selectivity, sensoring and filtration [1

• -like band gaps. We also have observed that larger number of carbon atoms in the unit cells in COFs causes smaller band gaps and vice versa. Energetic studies reveal that the studied structures are stable; however, notable difference in the layer stacking is observed from experimental observations. This