Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits. Keywords: memristor; nanojunction

• memristor was determined numerically as Vbias = Vdrive − I·RS. As a polarity convention, a positive bias corresponds to a higher potential applied on the planar Ag electrode with respect to the PtIr tip. A representative I(V) trace acquired within 400 ms is exemplified in Figure 1a. Bipolar resistive

• memristor junction is replaced by a short circuit (purple line), or when commercial surface-mounted device (smd) resistors replace the junction. The highest transmission ( = 2.45 V peak) is recorded for the short circuit. In contrast, the 330 Ω (brown line) and 810 Ω (black line) resistors, substantially

Characterization of electroforming-free titanium dioxide memristors

• John Paul Strachan,
• J. Joshua Yang,
• L. A. Montoro,
• C. A. Ospina,
• A. J. Ramirez,
• A. L. D. Kilcoyne,
• Gilberto Medeiros-Ribeiro and
• R. Stanley Williams

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

• non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of sub-oxide phases in the material drives the resistance changes. The creation of these phases, however, has a number of negative effects such as

• dramatically reduced microphysical changes after electrical operation. Keywords: electron microscopy; memristor; resistance switching; transition-metal oxide; X-ray spectroscopy; Introduction A memristor is a passive electronic element that displays a pinched hysteresis loop in its current–voltage

• characteristic, including the resistance switching that is seen in metal–insulator–metal (MIM) devices, often called resistive random access memory (RRAM or ReRAM). The memristor concept was developed by Chua [1][2], and much later associated with the behaviors seen in a range of nanoscale devices [3][4]. In

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles. Keywords: conductive scanning probe micoscopy; memristor; 3-D modes; resistive

• essentially two-terminal devices whose resistance depends on the polarity of the applied voltage. The simplest memristor consists of a thin oxide or semiconductor doped film (of thickness w) between top and bottom metallic electrodes. The slope of the functional relationship between the time integral of the

• are performed (writing and erasing) and followed (reading) in a noninvasive way. Analytical simulation of the memristor I–V behaviour Typical I–V characteristics conducted by application of a voltage cycle at a fixed location on the virgin (preswitched) 10 nm thick LSMO thin film surface presented a