Adsorption characteristics of Er₃N@C₈₀on W(110) and Au(111) studied via scanning tunneling microscopy and spectroscopy

• Sebastian Schimmel,
• Zhixiang Sun,
• Danny Baumann,
• Denis Krylov,
• Nataliya Samoylova,
• Alexey Popov,
• Bernd Büchner and
• Christian Hess

Beilstein J. Nanotechnol. 2017, 8, 1127–1134, doi:10.3762/bjnano.8.114

• achieve the reproducible preparation of sub-monolayer Er3N@C80-coverage on substrates with the demanded cleanliness for systematically STM/STS investigations, the molecules were deposited via organic molecular beam epitaxy under ultra-high vacuum (UHV) conditions (p < 10−9 mbar) and subsequently analyzed

Near-field surface plasmon field enhancement induced by rippled surfaces

• Mario D’Acunto,
• Francesco Fuso,
• Ruggero Micheletto,
• Makoto Naruse,
• Francesco Tantussi and
• Maria Allegrini

Beilstein J. Nanotechnol. 2017, 8, 956–967, doi:10.3762/bjnano.8.97

• ) that we will use in the SIE picture. Here, we are using the notation that , where and are unit vectors along the x and y directions. Since many patterning techniques, including ballistic deposition processes (such as molecular beam epitaxy or IBS) or plasma etching, are characterized by dynamic

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• is employed to form nanostructured patterns on semiconductor surfaces [19]. And second, this effect was applied to stimulate nucleation nanoislands by ion-assisted molecular beam epitaxy [20]. It allowed the reduction of size and size dispersion of QDs. Earlier, we studied some features of

• semiconducting [1], magnetic [2] and superconducting [3] nanomaterials. Among them, InAs/GaAs nanostructured materials have a considerable application potential in lasers [4], photonic devices [5], photoelectric converters based on multilayer heterostructures [6] and intermediate band devices [7]. Molecular beam

• epitaxy [8] and vapour phase epitaxy [9] are commonly used and well-understood techniques for obtaining such nanostructures. Besides the mentioned methods, classic growth methods such as liquid phase epitaxy [10], laser beam sputtering [11], electron beam sputtering [12] and ion beam sputtering [13] are

Ferromagnetic behaviour of ZnO: the role of grain boundaries

• Boris B. Straumal,
• Svetlana G. Protasova,
• Andrei A. Mazilkin,
• Eberhard Goering,
• Gisela Schütz,
• Petr B. Straumal and
• Brigitte Baretzky

Beilstein J. Nanotechnol. 2016, 7, 1936–1947, doi:10.3762/bjnano.7.185

• deposition (PLD), or magnetron sputtering [5][6][7][8][9]. However, the first disappointments also appeared immediately. Namely, single crystals, ceramics sintered from coarse-grained powders and single-crystalline films deposited by molecular beam epitaxy (MBE) were never ferromagnetic. Other synthesis

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• an established powerful method to monitor the epitaxial growth of monocrystalline semiconductor layers in situ [6][7] – for instance for molecular beam epitaxy (MBE). The RAS technique employs reflectometric as well as interferometric information, based on the difference in optical surface

• contribution have been grown with molecular beam epitaxy (MBE) in a R450 MBE system from DCA Instruments Oy, Turku, Finland. Base and working pressure of the system are (8–9) × 10−10 hPa and (1–2) × 10−10 hPa, respectively. For the experiments concerning the accuracy of the etch depth determination, described

Filled and empty states of Zn-TPP films deposited on Fe(001)-p(1×1)O

• Gianlorenzo Bussetti,
• Alberto Calloni,
• Rossella Yivlialin,
• Andrea Picone,
• Federico Bottegoni and
• Marco Finazzi

Beilstein J. Nanotechnol. 2016, 7, 1527–1531, doi:10.3762/bjnano.7.146

• elsewhere [19], coupled to a chamber devoted to organic molecular beam epitaxy (OMBE). The OMBE chamber was designed and built in collaboration with 5Pascal srl. (via Boccaccio 108, 20090 Trezzano sul Naviglio, Milano, Italy). The OMBE system is equipped with four Knudsen cells, whose crucibles are

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• relaxation by microcrack formation, is also observed in the ZnO thin film grown by plasma-assisted molecular-beam epitaxy [10]. Therefore, for textured, ZnO@B TCO, the residual strain induced by the lattice mismatch and the difference of thermal expansion coefficient is relaxed, leading to an apparent

Calculations of helium separation via uniform pores of stanene-based membranes

• Guoping Gao,
• Yan Jiao,
• Yalong Jiao,
• Fengxian Ma,
• Liangzhi Kou and
• Aijun Du

Beilstein J. Nanotechnol. 2015, 6, 2470–2476, doi:10.3762/bjnano.6.256

• -dimension materials with an ideal pore size is desired for helium separation. As a new member of the family of layered materials following graphene, silicene and germanene, 2D stanene has been recently successfully fabricated by molecular beam epitaxy [14]. 2D stanene possesses a graphene-like honeycomb

Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

• Jose Alberto Alvarado,
• Arturo Maldonado,
• Héctor Juarez,
• Mauricio Pacio and
• Rene Perez

Beilstein J. Nanotechnol. 2015, 6, 971–975, doi:10.3762/bjnano.6.100

• , they can be used in many applications, such as gas sensors [4]. A wide range of techniques to deposit thin films are used, such as molecular beam epitaxy (MBE) [5], single-source chemical vapor deposition (SS CVD) [6], metalorganic chemical vapor deposition (MOCVD) [7], sol–gel [8], spray pyrolysis [9

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• (CVD) [7], molecular beam epitaxy (MBE) [8], pulsed laser deposition (PLD) [9], vapor phase transport (VPT) [10], and thermal evaporation [11]. However, these methods are considered to be high-cost techniques since they require complex, expensive equipment, high vacuum conditions and high operation

Synthesis, characterization, monolayer assembly and 2D lanthanide coordination of a linear terphenyl-di(propiolonitrile) linker on Ag(111)

• Zhi Chen,
• Svetlana Klyatskaya,
• José I. Urgel,
• David Écija,
• Olaf Fuhr,
• Willi Auwärter,
• Johannes V. Barth and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 327–335, doi:10.3762/bjnano.6.31

• (NC–C≡C–Ph3–C≡C–CN) was deposited by organic molecular beam epitaxy onto an atomically clean and flat Ag(111) surface kept at 300 K. After the deposition, the samples were cooled down to about 6 K for imaging. Similar to earlier studies on the terphenyl-dicarbonitrile analog 1 [43], the individual

• the remarkable coordination reactivity of carbonitrile groups, which are very well known in bulk coordination chemistry. The linker 2 was deposited by organic molecular beam epitaxy onto an atomically clean and flat Ag(111) surface kept at 300 K, followed by the controlled co-deposition of Gd atoms

• ≡C–CN (2) were deposited from a quartz crucible held at T = 479 K by organic molecular beam epitaxy (OMBE) onto a clean Ag(111) crystal held at ≈300 K. Subsequently, Gd atoms were sublimated by means of electron beam evaporation from an outgassed Gd rod (99.9%, MaTecK GmbH, 52428 Jülich, Germany

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• Marseille Cedex 20, France 10.3762/bjnano.5.259 Abstract We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up

• positioned [28]. We have evolved an efficient and simple electrochemical process that joins focused-ion-beam (FIB) lithography and galvanic reaction to selectively prepare gold nanoparticles in well-defined locations. Afterwards these nanoparticles are used for the molecular beam epitaxy (MBE) growth of

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• ) the composition of large Ge dome islands grown by gas-source molecular beam epitaxy (GS-MBE) and buried under a Si cap [36]. APT measurements show that these islands are made of a more Ge-rich core (≈55 atom % Ge) and an increasingly Ge-deficient shell (≈15 atom % Ge). Despite the strong Si/Ge

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• substrate by ion beam-assisted molecular beam epitaxy [24]. Measurements for the elastic properties of the GaN film were performed by a CR-AFM, that was custom-built into a commercial Asylum Research MFP-3D AFM [25]. The AFM probe used for CR-AFM imaging was a Si PPP-NCLR (NanoSensors, Switzerland) with a

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• Dirac point and the Fermi level shows that approximately one electron is transferred per adsorbed K atom. The doping properties were also explored for different transition metal clusters (Ti, Fe and Pt) deposited on graphene by molecular beam epitaxy (MBE) [30]. The Ti and Fe metal clusters were found

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• Federico Baiutti Georg Christiani Gennady Logvenov Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany 10.3762/bjnano.5.70 Abstract In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently

• structural defects, with the aim of tailoring their functional properties by precise defects control. Keywords: artificial superlattices; complex oxides; defect chemistry; interface effects; molecular beam epitaxy; Introduction The progress in the synthesis of layered complex oxide compounds with high

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• , sputter erosion and atom deposition are similar processes. A continuum model for the mound formation in molecular beam epitaxy (MBE) predicts a coarsening exponent of 0.25 [21], which is very close to the measured values. The pattern exhibits a preferential orientation along the direction (Figure 2d and

Tuning the properties of magnetic thin films by interaction with periodic nanostructures

• Ulf Wiedwald,
• Felix Haering,
• Stefan Nau,
• Carsten Schulze,
• Herbert Schletter,
• Denys Makarov,
• Alfred Plettl,
• Karsten Kuepper,
• Manfred Albrecht,
• Johannes Boneberg and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 831–842, doi:10.3762/bjnano.3.93

• the magnetic behavior of the percolated film is discussed in the following sections. After preparation, the Au particle assemblies were introduced in a molecular beam epitaxy (MBE) chamber equipped with an e-beam evaporator loaded with Co and Pt (purity greater than 99.99%). The multilayer stack [Co

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• achieve NWs with tailored properties, namely chemical vapor deposition (CVD) [11], metal–organic CVD [12], molecular-beam epitaxy [13] and laser ablation techniques [14]. In this work we focus on the well-established VLS growth mechanism [15][16], which has shown remarkable potential in the fabrication of

Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

• Britta Kämpken,
• Verena Wulf,
• Norbert Auner,
• Marcel Winhold,
• Michael Huth,
• Daniel Rhinow and
• Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

• nanosized wires (NW) of silicon including thermal evaporation [9], molecular beam epitaxy [10], laser ablation [11], chemical vapor deposition (CVD) [12] and CVD in combination with the vapor–liquid–solid (VLS) method [13]. In the VLS mechanism, small solid metal particles catalyze the decomposition of the

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• substrates with an R450 molecular beam epitaxy (MBE) system from DCA Oy, Finland. The flux was determined by beam equivalent pressures (BEP) for all source materials. The partial Ga pressure was kept nearly constant between ≈1.60 and ≈1.89 × 10−7 hPa, for each individual growth process. Depending on the