The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• structure of Fe3O4 thin films and help to boost the magnetic properties. Experimental RF magnetron sputtering was used at room temperature to grow magnetite films with 40 nm thickness on a variety of substrates, including SiO2, MgO(100), and the multilayer substrate MgO/Ta/SiO2/Si(100). The MgO(100

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it

• the Monte Carlo technique [27]. An attempt to simulate the fabrication of structures with simple shape in a multilayer substrate using the level set method was reported in [28]. The aim of this study is to further develop the approach based on the level set method for quantitatively simulating the

• sputtering of a multilayer substrate under FIB irradiation. The results of the calculations for narrow trenches and rectangular boxes with varying aspect ratios were compared with cross-sectional scanning transmission electron microscopy (STEM) images of experimental test structures fabricated in the silicon