Ferroelectric nanodot reservoir for neuromorphic computing

• Anna Razumnaya,
• Yuri Tikhonov,
• Dmitrii Naidenko,
• Léo Boron,
• Valerii Vinokur and
• Igor Lukyanchuk

Beilstein J. Nanotechnol. 2026, 17, 352–364, doi:10.3762/bjnano.17.24

• information encoding and provides a rich dynamic representation for subsequent processing in a readout layer of a neuromorphic circuit. Keywords: ferroelectric nanodots; multilevel logic; neuromorphic circuits; polarization; topological states; Introduction Neuromorphic computing aims to emulate the

• , nonvolatility, analog state tunability, and compatibility with CMOS platforms) that make them particularly attractive for energy-efficient neuromorphic circuits [16][17][18][19][20][21]. They inherently possess a multitude of metastable polarization orientations, corresponding to different local minima of the

• . Since the voltage response reflects complex nonlinear processes such as switching and relaxation, it serves as a rich source of output features, analogous to synaptic signals in neuromorphic circuits. A further signal integration scheme, illustrated in Figure 6c, uses spatial multiplexing, where

Programmable soliton dynamics in all-Josephson-junction logic cells and networks

• Vsevolod I. Ruzhickiy,
• Anastasia A. Maksimovskaya,
• Sergey V. Bakurskiy,
• Andrey E. Schegolev,
• Maxim V. Tereshonok,
• Mikhail Yu. Kupriyanov,
• Nikolay V. Klenov and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2025, 16, 1883–1893, doi:10.3762/bjnano.16.131

• for the flexible configuration of advanced logic and neuromorphic circuits. Results Model description To model the dynamics of kinetic solitons [43], we employ the resistively and capacitively shunted junction (RCSJ) model [1], where the total current I across a Josephson junction is the sum of the

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits. Keywords: memristor; nanojunction