Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• differences in the range of 70 meV were reported in the case of titanium dioxide (110) and (100) faces [35]. In the present case, the differences could be higher because the whole sample with TiO nanostructures was annealed up to 1150 °C and thus a possible reduction-driven non-stoichiometry occurs. From a

Tailoring the magnetic properties of cobalt ferrite nanoparticles using the polyol process

• Malek Bibani,
• Romain Breitwieser,
• Alex Aubert,
• Vincent Loyau,
• Silvana Mercone,
• Souad Ammar and
• Fayna Mammeri

Beilstein J. Nanotechnol. 2019, 10, 1166–1176, doi:10.3762/bjnano.10.116

• piezoelectric polymers. Keywords: cobalt ferrite; magnetocrystalline anisotropy; magnetostriction; nanoparticle; non-stoichiometry; polyol process; Introduction Recently, extrinsically (or artificially) magnetoelectric (ME) multiferroic (MF) materials have been seriously investigated for many applications in

Morphology, structural properties and reducibility of size-selected CeO_2−x nanoparticle films

• Maria Chiara Spadaro,
• Sergio D’Addato,
• Gabriele Gasperi,
• Francesco Benedetti,
• Paola Luches,
• Vincenzo Grillo,
• Giovanni Bertoni and
• Sergio Valeri

Beilstein J. Nanotechnol. 2015, 6, 60–67, doi:10.3762/bjnano.6.7

• magnetron sputtering, the technique used in this study. Tschöpe et al. [12] studied ceria NPs realized by magnetron sputtering from pure and mixed metal target and inert gas condensation, observing the high non-stoichiometry of these systems due to the particular synthesis method. The non-stoichiometry is

Characterization of electroforming-free titanium dioxide memristors

• John Paul Strachan,
• J. Joshua Yang,
• L. A. Montoro,
• C. A. Ospina,
• A. J. Ramirez,
• A. L. D. Kilcoyne,
• Gilberto Medeiros-Ribeiro and
• R. Stanley Williams

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

• state of the device was similar [26], suggesting that the material changes occurred during electroforming rather than during switching and that any material differences between the ON and OFF states were undetectable with this technique. For the forming-free device containing a TiO2−x layer, the non

• -stoichiometry is qualitatively evident in the NEXAFS of the material grown, seen in the Virgin state (Figure 3b, green curve). Compared to the as-grown stoichiometric TiO2 layer (Figure 3a, green curve), this spectrum exhibits more merged and less prominent crystal field split doublets (457–462 eV and 462–468

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

• Bert Stegemann,
• Matthias Klemm,
• Siegfried Horn and
• Mathias Woydt

Beilstein J. Nanotechnol. 2011, 2, 59–65, doi:10.3762/bjnano.2.8

• general formulae (Ti,V)nO2n-1 or (W,Mo)nO3n-1 [4][5][6]. In a simplified way, the Magnèli phase structure can be derived from a perfect V2O5 crystal, which has one missing oxygen layer, i.e., the (121) plane, which is called the crystallographic shear (CS) plane and compensates for the non-stoichiometry