Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon

• /760 mmHg, 25 g), and Si3Cl8 (TB = 215 °C/760 mmHg, 16 g). Higher oligosilanes remained in the distillation residue and were not isolated. For characterization of the precursor compounds, Si2Cl6 and Si3Cl8 were identified by their characteristic 29Si NMR chemical shifts (Si2Cl6, δ = −6.4 ppm; Si3Cl8, δ

• = −3.7 (-SiCl3), −7.4 ppm (-SiCl2-)) [29][30] and by GC–MS measurements. Trace analysis was performed by ICP–MS measurements. For the preparation of the doped samples, BBr3 and PCl3 were added to the oligosilanes in very small quantities (100 ppm). After distillation the doped oligosilanes were directly