Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• into an independent field of science [2]. This shows that understanding wetting phenomena is crucial for a variety of industrial processes and research fields. In microtechnology, the dispersion of organic photoresists on substrates is indispensable for lithographic top-down microstructuring, yielding

Surface improvement of organic photoresists using a near-field-dependent etching method

• Felix J. Brandenburg,
• Tomohiro Okamoto,
• Hiroshi Saito,
• Benjamin Leuschel,
• Olivier Soppera and
• Takashi Yatsui

Beilstein J. Nanotechnol. 2017, 8, 784–788, doi:10.3762/bjnano.8.81

• reduction of the surface roughness was observed as compared to the 325 nm light. These results indicate that even wavelengths above 325 nm can cause surface roughness improvements without notably changing the structure of the photoresist. Keywords: near-field etching; organic photoresists; surface

• single-photon absorption but the former has a much lower probability [14][15]. The photoresist in this study is a conventional, organic, chemically amplified resist (CAR) (EPIC 2096 ArF Photoresist), which is sensitive to ArF excimer laser excitation (λ = 193 nm). Organic photoresists are easily obtained

• -product. Furthermore, since near-field etching has only been tested on nonorganic, flat materials and nonpatterned organic materials, it is of great interest to observe the near-field etching effect on organic photoresists. Experimental For the purpose of this study, a positive tone organic photoresist