Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• and Computer Engineering at University of Connecticut, Storrs, CT-06269, USA 10.3762/bjnano.11.147 Abstract The dimensions of amorphized regions in phase-change memory cells are critical parameters to design devices for different applications. However, these dimensions are difficult to be determined

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

• and Icell to closely resemble the applied Vch1 and the IR_load, respectively (Equations 4–7) with lesser distortion. Conclusion We propose a method to extract the amorphized length in phase-change memory devices based on electrical measurements. We utilized this procedure to study the variability in

Controlling the near-field excitation of nano-antennas with phase-change materials

• Tsung Sheng Kao,
• Yi Guo Chen and
• Ming Hui Hong

Beilstein J. Nanotechnol. 2013, 4, 632–637, doi:10.3762/bjnano.4.70

• the antennas are 40 nm, while the centre-to-centre distance d between the nearest neighbouring antenna is 100 nm. Results and Discussion The underlying GST thin film is a phase-change material that has been widely applied in commercial optical disks, optical switchers and phase-change memory [18][19