Biomolecule-assisted synthesis of carbon nitride and sulfur-doped carbon nitride heterojunction nanosheets: An efficient heterojunction photocatalyst for photoelectrochemical applications

• Hua Bing Tao,
• Hong Bin Yang,
• Jiazang Chen,
• Jianwei Miao and
• Bin Liu

Beilstein J. Nanotechnol. 2014, 5, 770–777, doi:10.3762/bjnano.5.89

• CN+CNS is much lower, implying that the enhanced photoresponse of heterojunction sample comes from better separation of photogenerated electrons and holes instead of improved photon absorption. The mechanism for photocurrent enhancement was further studied by measuring the photoresponse under

• different light source and the EQE spectra. Figure 6c exhibits the photoresponse of CN, CNS and CN/CNS under different light sources. It can be observed that the photocurrent can be reproducibly produced under AM 1.5G simulated sunlight or visible light (λ > 420 nm) with the same trend following the order

A visible-light-driven composite photocatalyst of TiO₂ nanotube arrays and graphene quantum dots

• Donald K. L. Chan,
• Po Ling Cheung and
• Jimmy C. Yu

Beilstein J. Nanotechnol. 2014, 5, 689–695, doi:10.3762/bjnano.5.81

• have been developed to achieve photoresponse of TiO2-based catalysts towards visible light, for example, doping with metal or non-metal [7][17][18][19][20], coupling with other semiconductor materials to form composite catalysts [4][21][22][23][24]. Two-dimensional graphene has attracted immense

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Grzegorz Luka,
• Lukasz Wachnicki,
• Sylwia Gieraltowska,
• Krzysztof Kopalko,
• Eunika Zielony,
• Piotr Bieganski,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2014, 5, 173–179, doi:10.3762/bjnano.5.17

• highest value of generated photocurrent flows through the junction with an illumination in the range of 900 nm to 1000 nm, i.e., when carriers are generated in a Si substrate. Samples with a similar value of the shunt resistance (A, B) have a similar photoresponse curves. Quantum efficiency values

Study of mesoporous CdS-quantum-dot-sensitized TiO₂ films by using X-ray photoelectron spectroscopy and AFM

• Mohamed N. Ghazzal,
• Robert Wojcieszak,
• Gijo Raj and
• Eric M. Gaigneaux

Beilstein J. Nanotechnol. 2014, 5, 68–76, doi:10.3762/bjnano.5.6

• sensitize TiO2. The suitable positions of the potential energies allow for an easy transfer of the exciton between the semiconductors. Not only does that help to optimize the charge separation by reducing the recombination of charges, it also allows for an extension of the photoresponse of the photocatalyst

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• . For both sensitized and bare TiO2 the SPV with onset illumination, ton, is below the resolution limit (50 ms) of the measurement system. The photoresponse time corresponds to the required time for the charge carriers to reach a steady-state condition upon illumination. In turn the recombination time

Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFM

• Igor Beinik,
• Markus Kratzer,
• Astrid Wachauer,
• Lin Wang,
• Yuri P. Piryatinski,
• Gerhard Brauer,
• Xin Yi Chen,
• Yuk Fan Hsu,
• Aleksandra B. Djurišić and
• Christian Teichert

Beilstein J. Nanotechnol. 2013, 4, 208–217, doi:10.3762/bjnano.4.21

• ZnO NRs revealed that the minimum photon energy sufficient for photocurrent excitation is 3.1 eV. This value is at least 100 meV lower than the band-gap energy determined from the photoluminescence experiments. Conclusion: The obtained results suggest that the photoresponse in ZnO NRs under ambient

• . Moreover, the exposure of ZnO surfaces to light irradiation induces photodesorption of oxygen molecules from the surface [22], which leads in turn to a rise of conductivity. Therefore, the photoresponse in ZnO is very often considered as an exclusively surface-induced process whereas the role of the bulk

• technique to study the electrical transport in individual upright standing ZnO NRs grown by thermal evaporation [41]. The results obtained together with those of time-resolved photoluminescence (PL) suggest that the photoresponse in ZnO NRs originates preferentially from the photoexcitation of charge

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

• Luca Camilli,
• Manuela Scarselli,
• Silvano Del Gobbo,
• Paola Castrucci,
• Eric Gautron and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

• device. In the in-plane configuration the T1 switch is on while T2 is off; the situation is reversed in the top-down configuration. Figure 9 displays the photoresponse of our device, for both configurations, acquired at null applied voltage and with the light spot (1 × 2 mm2) impinging on the MWCNT film

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and

• photoresponse. Keywords: permeable polymer; photoresponse; polydimethylsiloxane; UV photodetection; ZnO nanowires; Introduction ZnO is a direct wide band gap semiconductor with a 3.37 eV gap and a high exciton binding energy of 60 meV at room temperature, which is promising for optoelectronic applications

• photodetectors based on ZnO films or nanocrystals have been reported. It has been demonstrated that ZnO nanowires have high internal photoconduction gain and much stronger responsivity under UV-light illumination compared to the bulk film [3]. The UV photoresponse mechanism of ZnO nanowires is dominated by the