On the pathway of cellular uptake: new insight into the interaction between the cell membrane and very small nanoparticles

• Claudia Messerschmidt,
• Daniel Hofmann,
• Anja Kroeger,
• Katharina Landfester,
• Volker Mailänder and
• Ingo Lieberwirth

Beilstein J. Nanotechnol. 2016, 7, 1296–1311, doi:10.3762/bjnano.7.121

• cell membrane (Figure 4C and Supporting Information File 1, Figure S7). However, when this structure pinches off the cell membrane, it already forms an endosome-like structure containing a lot of NPs. A final pinch-off of these tubular invaginations is quite likely because we observe endosome-like

• assume that this large area coverage hinders the final vesicle pinch-off from the cell membrane. The additional silica layer on the cell membrane prevents the intimate membrane–membrane contact necessary for the coalescence of the membrane lipid bilayer at the point of pinch-off. Furthermore, the

• additional silica layer is likely to change the viscoelastic properties of the cell membrane yielding an increased maximum bending radius. Nevertheless, the cell manages to perform the pinch-off which is indicative for an active endocytic process. Moreover, when suppressing any active endocytosis by cooling

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is

• field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current. Keywords: AFM nanolithography; junctionless transistors; pinch-off; scanning probe microscope; simulation; Introduction

• ), quantum ballistic transport, and novel structures such as bulk planar junctionless transistors (BPJLTs) have also been investigated [3][4][5]. The idea behind the JLTs, or pinch-off transistors [6], is to simplify the source/drain engineering by removing the conventional junctions, and at the same time