Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

• Stephen Connaughton,
• Maria Koleśnik-Gray,
• Richard Hobbs,
• Olan Lotty,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

• (FAU), Staudtstraße 7, 91058 Erlangen, Germany Materials Chemistry & Analysis Group, Department of Chemistry, University College Cork, Cork, Republic of Ireland 10.3762/bjnano.7.119 Abstract The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was

• spatial spreading of the free holes towards the nanowire centre upon diameter reduction. Keywords: diameter-dependence; germanium; nanowire; resistivity; self-seeded; Findings Semiconducting nanowires are in the focus of research due to their potential applications in electronics and optics [1][2][3][4

• the resistivity of heavily/degenerately doped self-seeded Ge NWs. For our study we chose heavily doped self-seeded Ge NWs predominantly having the same crystallographic direction [11][14][15]. Individual NWs were transferred onto 300 nm thermally grown SiO2 substrates and contacted lithographically in