Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• /bjnano.8.237 Abstract We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds

• attachment; dissociative ionization; electron beam induced deposition; low-energy electrons; silacyclohexane; Introduction Focused electron beam induced deposition (FEBID) [1][2] is a 3-D direct writing method suitable for the fabrication of nanostructures, even on non-planar surfaces. This approach is in

• . Silacyclohexane (SCH) and dichlorosilacyclohexane (DSCH), shown in Figure 1, are cyclohexane derivatives where one of the carbon atoms is replaced by a silicon atom, and in DCSCH two chlorine atoms are attached to that silicon atom. In a fairly recent gas phase study [35], where these molecules were exposed to