Terthiophene on Au(111): A scanning tunneling microscopy and spectroscopy study

• Berndt Koslowski,
• Anna Tschetschetkin,
• Norbert Maurer,
• Elena Mena-Osteritz,
• Peter Bäuerle and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 561–568, doi:10.3762/bjnano.2.60

• insulating layer, whereas strong coupling is desirable when contacting a molecular semiconductor to a metal electrode in order to obtain an efficient injection behavior. Earlier investigations of thiophenes with STM were carried out on self-assembled monolayers (SAMs) mostly under ambient conditions or in

Charge transfer through single molecule contacts: How reliable are rate descriptions?

• Denis Kast,
• L. Kecke and
• J. Ankerhold

Beilstein J. Nanotechnol. 2011, 2, 416–426, doi:10.3762/bjnano.2.47

• quantitatively in the domain m0 < 1 and for all ratios σ. We note that recently the strong coupling limit including the current statistics has been addressed as well [35][36]. 2 Rate approach I The simplest perturbative approach considers the cooperative effect of electron tunneling and phonon excitation in

• reliable results. In Figure 7 the frequency of the phonon mode is fixed and only the electron–phonon coupling is tuned over a wider range. For strong coupling (here m0 = 2) the equilibrated (nonequilibrated) model predicts a smaller (larger) current than the exact one in contrast to the situation for

• (n,n + 1) > f (n,n − 1), for all 0 ≤ n ≤ N0(m0) where N0(m0) increases with decreasing m0. The opposite is true for n > N0(m0) such that in a steady state, depending on the voltage, the tendency is to have higher excited phonon states occupied by smaller couplings m0. In particular, for strong