Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• devices, we have estimated the field effect mobility from the slope of the high-voltage section of the transfer curve by the equation for the saturation regime [34][35]. The hole mobility was found to range between 0.6 ×10−6 and 2.1 × 10−6 cm2·V−1·s−1, and the threshold voltage between −35 and −45 V. In

Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

• Shawn Sanctis,
• Rudolf C. Hoffmann,
• Sabine Eiben and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2015, 6, 785–791, doi:10.3762/bjnano.6.81

• current and voltage of 40 mA and 40 kV, respectively. FET characterizations were measured in the dark, using an HP 4155A semiconductor parameter analyzer (Agilent) in a glove box under constant O2 and H2O (<0.5 ppm). Charge carrier mobility in the saturation regime µSAT and the threshold voltage Vth were

• the zinc oximato complex as precursor [13]. The transistor behaviour of the wt TMV/ZnO hybrid material was then optimized based on the crucial characteristic FET values, current on/off ratio (Ion/off), threshold voltage (Vth) and charge carrier mobility (µ) which are considered to be essential

• deposition cycles, obtained at drain–source voltage of 30 V, for gate–source voltage varied from 0–30 V in 10 V steps. Characteristic values for field-effect mobility μ, threshold voltage (Vth), and on/off current ratio (Ion/off) of wt TMV/ZnO hybrid material based transistor devices. Supporting Information

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• case, the thermionic current through the heterojunction is less than that present in the substrate alone. The detailed characteristics of the dark current around the threshold voltage are shown in Figure 4a, and Figure 4b shows the plot of the capacitance–voltage (C–V) measurement, which evidence the

• 378 to 980 nm. Figure 5a reports the photocurrent measured in the configuration shown in Figure 2b. When the drain voltage exceeds the threshold voltage shown in Figure 3, the reverse photocurrent begins to grow linearly until reaching a plateau, which is constant over a large voltage range. The

• the implantation area. The inset shows a Raman spectrum of the same sample (b) Side view of electrical readout connections. Dark current comparison of the Si substrate and the CNT–Si heterojunction. (a) Details of the dark current around the threshold voltage with a curve fit. (b) C–V plot of the

Electrical response of liquid crystal cells doped with multi-walled carbon nanotubes

• Amanda García-García,
• Ricardo Vergaz,
• José F. Algorri,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2015, 6, 396–403, doi:10.3762/bjnano.6.39

• . Remarkable conductivity differences between CNT-doped and undoped LC cells have been reported, and studies about variations in the dielectric permittivity [14][15], threshold voltage [16] and response time [17][18] have been published. Yet a more detailed description of the electrical behavior of CNT-doped

• , the phase delay is δ = 3π. From 1.8 to 1.3 Vp (the threshold voltage), the delay increases further, about 2π/3 according to the sine value. Using the value Δn = 0.120 of the data sheet yields The cell thickness matches very well with the expected manufacturing value (8.25 μm). Similar results have

• at which the resistor behavior is dominating increases. The effect is not reversible as the resistor behavior persists when the exciting voltage is brought back to values below the threshold voltage. Experimental Materials: LCs and MWCNTs The LC MLC-6290-000 (Merck) has been chosen for this study. It

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• (less than the threshold voltage), the Schottky barrier is too high and wide to allow the charge carrier flow over or to tunnel through the barrier. When the gate voltage is positively increased (greater than the threshold voltage), the bands bend downward and narrow the Schottky barrier width, enabling

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• large shift of the threshold voltage in carbon nanotube field-effect transistors (CNFETs). SWNTs possess several properties that make them attractive candidates for gas sensors. They have all their atoms on the surface, endowing them with the highest specific surface area possible together with graphene

• thought experiment, then no sensor response is expected. Sensor response of devices with unpassivated contacts tend to be a tilt of the transfer characteristics (visible in the linear part of the curve) as well as a shift of the threshold voltage; this is often attributed to the effect of adsorption on

• permission from [23]. Copyright 2007 IOP publishing. b) We have shown ultraclean, suspended transistors that exhibit remarkably low threshold-voltage fluctuations compared to on-substrate transistors [36]. Reproduced with permission from [36]. Copyright 2014 Elsevier. Performance summary of individual or few

Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• variation in transistor electrical parameters including conductance, transconductance, threshold voltage and hysteresis gap. Our results showed that the response of ssDNA-decorated devices to DA, irrespective of the presence or absence of UA, was DNA sequence dependent and exhibited the trend: G > A > C and

• sequence combinations, which interact differently with CNTs as well as DA, and consequently, this influences the FET response. The transistor electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap extracted from the current–voltage characteristics are indicators

• ID–VDS (output) curve between −0.1 V to 0.1 V at a constant VG of −24 V corresponding to the on state of the FET. The threshold voltage (Vth) is the voltage demarcating the on and off states. It is obtained by extrapolating the steepest portion of the transfer curves to intersect the x-axis for both

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• in electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap. The channel length (L) dependence of each of these parameters necessitates the need to include them when interpreting the effect of L on the response to hybridization. Using the definitions of

• nanotube surface. However, with increasing channel length, the large channel resistance could be a limiting factor in the detection sensitivity. In particular, the FET electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap extracted from the current–voltage

• . Calculations The effective mobility (µe) represents the intrinsic physical charge carrier mobility of the CNT channel without including any device attributes and is given by, where G = δID/δVDS at constant VG, G is the conductance at a particular gate voltage and Vth is the threshold voltage [24]. The

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• isolated from the silicon substrate by a buried oxide (box) layer. Back-gate contact is used to control the conductivity of the SiNW with the box layer. When applying a threshold voltage on the silicon substrate, SiNW conductivity varies rapidly with small changes in the potential of the nanowire surface

• . When the gate voltage drops from 2.5 V to below 2.0 V, Ids drops quickly because it reaches the threshold voltage (2.0 V) that turns the channel to an off-state (while it was on-state at 2.5 V). Figure 12 shows the admittance spectroscopies for the gate voltages around the threshold value where the

• changes its frequency-domain properties at a certain gate voltage. This voltage value corresponds to the threshold voltage of the device. The presented methods can be implemented cost-effectively, and provide responses within a few seconds. The applied techniques can also be used for measuring frequency

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• quite similar to the conventional metal-oxide semiconductor field effect transistor (MOSFET), which comprises source and drain electrodes with the gate insulator inducing the channel of carriers and a silicon back gate [22][23] to augment the carrier density or adjust the threshold voltage. A CNT

• SWCNT as: where Vgs is the gate–source voltage and Vt is the threshold voltage. Proposed model for graphene The underlying operational principle in MOSFET is based on the electron flow between the source and drain electrodes, which can be controlled by the gate voltage. According to Landauer formula

• level to move toward their conduction band edges, making the threshold voltage Vth more negative. Thus, it can be said that this shift toward negative gate voltage is caused by the adsorption of NH3 on the graphene/CNT channel at this temperature. Figure 5 illustrates the I–V characteristics of the

A nano-graphite cold cathode for an energy-efficient cathodoluminescent light source

• Alexander N. Obraztsov,
• Victor I. Kleshch and
• Elena A. Smolnikova

Beilstein J. Nanotechnol. 2013, 4, 493–500, doi:10.3762/bjnano.4.58

• ], glassy carbon [10], graphite [11], and carbon nanotubes [12]. The low threshold voltage and the intensive emission properties, which are usually observed for these materials, result from the high aspect ratio of emission sites, which are located on the edges of the graphene monoatomic layers. The low

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• transistors (inversion mode). The configuration of the electric field, in a direction perpendicular to the current, indicates that the minimum value of the normal electric field is below the threshold voltage, due to the formation of the electrically neutral conducting wire below the threshold voltage between

• the source and the drain. By increasing the gate voltage above the threshold voltage, the carriers are affected by a large electric field normal to the current flow. This is completely opposite to the case of accumulation-mode (AM) devices in which the highest electric field appears in the channel

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• . This is in accordance with the results of Heath et al. [34], who reported a specific resistivity of intrinsic NWs, grown with SiH4 as a precursor, of about 1 kΩ·cm. Back-gated measurements revealed an unintentionally p-type doping leading to a threshold voltage of −4.5 V (Figure 3 inset). Such p-type