Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors

Jakub Jadwiszczak, Pierce Maguire, Conor P. Cullen, Georg S. Duesberg and Hongzhou Zhang
Beilstein J. Nanotechnol. 2020, 11, 1329–1335. https://doi.org/10.3762/bjnano.11.117

Cite the Following Article

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors
Jakub Jadwiszczak, Pierce Maguire, Conor P. Cullen, Georg S. Duesberg and Hongzhou Zhang
Beilstein J. Nanotechnol. 2020, 11, 1329–1335. https://doi.org/10.3762/bjnano.11.117

How to Cite

Jadwiszczak, J.; Maguire, P.; Cullen, C. P.; Duesberg, G. S.; Zhang, H. Beilstein J. Nanotechnol. 2020, 11, 1329–1335. doi:10.3762/bjnano.11.117

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