Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

Majid Sanaeepur
Beilstein J. Nanotechnol. 2020, 11, 688–694. https://doi.org/10.3762/bjnano.11.56

Cite the Following Article

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions
Majid Sanaeepur
Beilstein J. Nanotechnol. 2020, 11, 688–694. https://doi.org/10.3762/bjnano.11.56

How to Cite

Sanaeepur, M. Beilstein J. Nanotechnol. 2020, 11, 688–694. doi:10.3762/bjnano.11.56

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