Supporting Information
The optimization of the thermal-annealing procedure and the magnetic characterization of the as-grown nanowires are available in the Supporting Information.
| Supporting Information File 1: Annealing procedure and hysteresis loops of the as-grown C–Ni nanowires. | ||
| Format: PDF | Size: 532.1 KB | Download |
Cite the Following Article
Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers
Abdel-Aziz El Mel, Jean-Luc Duvail, Eric Gautron, Wei Xu, Chang-Hwan Choi, Benoit Angleraud, Agnès Granier and Pierre-Yves Tessier
Beilstein J. Nanotechnol. 2012, 3, 846–851.
https://doi.org/10.3762/bjnano.3.95
How to Cite
El Mel, A.-A.; Duvail, J.-L.; Gautron, E.; Xu, W.; Choi, C.-H.; Angleraud, B.; Granier, A.; Tessier, P.-Y. Beilstein J. Nanotechnol. 2012, 3, 846–851. doi:10.3762/bjnano.3.95
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- WADA MAKOTO; YAMAZAKI YUICHI; KAJITA AKIHIRO; ISOBAYASHI ATSUNOBU; SAITO TATSURO. Semiconductor device comprising a graphene wire. US 9437716 B2, Sept 6, 2016.
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- WADA MAKOTO; YAMAZAKI YUICHI; KAJITA AKIHIRO; ISOBAYASHI ATSUNOBU; SAITO TATSURO. SEMICONDUCTOR DEVICE. US 20140084250 A1, March 27, 2014.
