A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin and Igor I. Soloviev
Beilstein J. Nanotechnol. 2013, 4, 330–335. https://doi.org/10.3762/bjnano.4.38

Cite the Following Article

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin and Igor I. Soloviev
Beilstein J. Nanotechnol. 2013, 4, 330–335. https://doi.org/10.3762/bjnano.4.38

How to Cite

Presnov, D. E.; Amitonov, S. V.; Krutitskii, P. A.; Kolybasova, V. V.; Devyatov, I. A.; Krupenin, V. A.; Soloviev, I. I. Beilstein J. Nanotechnol. 2013, 4, 330–335. doi:10.3762/bjnano.4.38

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