Si/Ge intermixing during Ge Stranski–Krastanov growth

Alain Portavoce, Khalid Hoummada, Antoine Ronda, Dominique Mangelinck and Isabelle Berbezier
Beilstein J. Nanotechnol. 2014, 5, 2374–2382. https://doi.org/10.3762/bjnano.5.246

Cite the Following Article

Si/Ge intermixing during Ge Stranski–Krastanov growth
Alain Portavoce, Khalid Hoummada, Antoine Ronda, Dominique Mangelinck and Isabelle Berbezier
Beilstein J. Nanotechnol. 2014, 5, 2374–2382. https://doi.org/10.3762/bjnano.5.246

How to Cite

Portavoce, A.; Hoummada, K.; Ronda, A.; Mangelinck, D.; Berbezier, I. Beilstein J. Nanotechnol. 2014, 5, 2374–2382. doi:10.3762/bjnano.5.246

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