Presently, most microelectronic devices are fabricated using top-down approaches. Over the next years these processes will reach the limits of technological instrument resolution. A broad range of applications require ultrasmall, complex devices that cannot be produced using top-down methods. New processes building on the natural self-organization of matter should therefore be conceived and developed, along with adequate characterization methods in order to allow for their application in innovative devices. Focusing on this dynamic new field, self-assembly “the science of things that put themselves together” explores the physics of nanostructures, new synthesis approaches, in addition to size-, shape- and composition-dependent properties. The major obstacles concern the reproducibility and control of the basic mechanisms in order to predict and produce patterns with tunable size, periodicity and position and the new physical properties resulting from low dimensionality.
See also the Thematic Series:
Self-assembly of nanostructures and nanomaterials II
Self-assembly at solid surfaces
Figure 1: Schematic image of the two device layouts used: single face sample (SFS) and double face sample (DF...
Figure 2: TEM micrographs of CNTs dispersion spray obtained by means of: the ultrasonic atomizer a); the airb...
Figure 3: SEM image of the MWCNT film on a semi-insulating gallium arsenide substrate.
Figure 4: Dark-current–voltage characteristics for the SFS, DFS and ITO/GaAs/Ti/Au photodetector configuratio...
Figure 5: Absolute quantum efficiency trend in the visible light range, calculated at a bias voltage of −6 V ...
Figure 6: Absolute quantum efficiency trend in the UV range, calculated at a bias voltage of −6 V for the dev...
Figure 7: Responsivity trend of GaAs and CNTs based photodetectors.
Figure 8: Normalized photocurrent spectra measured at: (a) negative voltages, (b) positive voltages applied t...
Figure 9: Photocurrent as a function of the relative monochromatic light intensity at λ = 800 and 890 nm for ...
Figure 1: SEM images acquired during APT sample preparation in a dual-beam FIB process. The image sequence (a...
Figure 2: Sketch of the sample structure and AFM measurements performed on the sample surface after MBE growt...
Figure 3: APT volume (100 × 100 × 90 nm3) obtained from the sample. Green, gray, red and blue dots correspond...
Figure 4: Top-down, 1D Ge concentration profiles measured between the islands in two different samples. The p...
Figure 5: Cross-sectional TEM image of a typical dome island (a), and side-views of two different APT volumes...
Figure 6: APT volume showing 2% of the Ni atoms, 5% of the Ge atoms, and 100% of the O atoms (the Si atoms ar...
Figure 7: Top-down 1D Ge concentration profiles measured in two different APT volumes, one in the direction p...
Figure 8: APT analysis: (a) 3D volume (120 × 120 × 100 nm3), (b) 2D map of the Ge concentration distribution ...
Figure 9: (a) APT volume (90 × 90 × 130 nm3) and (b) Si and Ge 1D concentration profiles measured in (a). Figure 9c in...
Figure 10: (a) APT volume (70 × 70 × 85 nm3) and (b) Si and Ge 1D concentration profiles measured in this volu...
Figure 11: APT measurements obtained for four APT volumes (green and red surfaces) which form almost half of a...
Figure 1: Comparison between the SEM images of an etched copper surface (left) and a smooth copper surface (r...
Figure 2: High magnification SEM image of an etched copper surface, showing the fine dendritic structure.
Figure 3: Line profile (profilometry) of an etched copper surface. Total scan length 4.8 mm.
Figure 4: Normal FT-Raman spectra of 1,2,4-triazole in solution. Solvent subtracted.
Figure 5: Optimized geometry of 1H-1,2,4-triazole (upper left) with the calculated distances (angstroms), alo...
Figure 6: Simulated Raman spectra of the two tautomers of 1,2,4-triazole.
Figure 7: Micro-Raman spectra (excitation 785 nm): smooth copper plate (A); etched copper plate (B); etched c...
Figure 8: Model systems for 1H/copper (upper panel) and 4H/copper (lower panel) complexes; carbon, nitrogen a...
Figure 9: Adsorption model of the 1,2,4-triazole molecules on the copper substrate.
Figure 10: Comparison between the SERS spectra of 1,2,4-triazole and imidazole absorbed on etched copper surfa...
Figure 1: Schematic representation of the process steps: (a) formation of SiO2 (5 nm thick) by RTO; (b) openi...
Figure 2: Scanning electron microscope (SEM) images of the ordered arrays of Si NWs showing (left) a NW array...
Figure 3: The raw PL spectrum obtained from sample (C) at 6 K with excitation at 405 and 458 nm.
Figure 4: Temperature dependence of the instrument-response-corrected PL spectrum obtained from sample (C) wi...
Figure 5: Instrument-response-corrected PL spectra obtained with 405 nm excitation from the (A), (B), and (C)...
Figure 6: Curve-resolved PL spectrum of (a) sample (A), (b) sample (B), and (c) sample (C) at 25 K obtained w...
Figure 1: Hypothetical reaction pathways of ethynylbenzyl alcohol and trifluroalkyne during thermal and UV-in...
Figure 2: High-resolution XPS Si 2p spectra of the surface (a) thermally functionalized with trifluoroalkyne,...
Figure 3: High-resolution XPS C 1s spectra of surfaces (a) thermally functionalized with ethynylbenzyl alcoho...
Figure 4: High-resolution XPS O 1s spectra of surfaces (a) thermally functionalized with ethynylbenzyl alcoho...
Figure 1: Sketch of the experimental set up: the NPs are created by the NC200 source (A), they are mass selec...
Figure 2: SEM images of NPs films: NPs diameter 6 nm (a), NPs diameter 9 nm (lateral size distribution in the...
Figure 3: STEM (a) and HRTEM (b) images of ceria NPs corresponding to the sample with average diameter of 9 n...
Figure 4: (a) Ce 3d XPS spectra and corresponding fit of the 9 nm sample acquired at 40 W, in the bottom regi...
Figure 5: (a) Ce 3d XPS spectra for a complete reduction (black curves) and oxidation (red curve) cycle. (b) ...
Figure 6: STM images of a cerium oxide ultrathin film on Pt(111) (a) as grown, acquired at 2.0 V and 0.03 nA,...
Figure 1: (a) Classical model in which each domain is characterized by its own supposedly constant surface st...
Figure 2: (a) Continuous (red) curve: normalised strain field ε/Δs1 calculated with Equation 2, Black dots: normalised ...
Figure 3: Normalised strain fields ε/Δs1 calculated for 1-D periodic stripes. (a) d/L = 1/2 , (b) d/L = 3/10....
Figure 4: Black squares: normalised strain ε/Δs1 solution of Equation 8 calculated for Δs1/S11 = 0.5, red squares: clas...
Figure 1: SRIM calculations of the implant distribution of Te (red) and Se (blue) atoms in Ge. The distributi...
Figure 2: SEM plan-view images of the as-implanted Se sample: (1) low resolution view showing the different t...
Figure 3: Thermal annealing effects on the co-implanted Se/Te sample: (1) as-implanted, (2) TB = 4.1 µm; (3) ...
Figure 4: (1) and (2) TEM cross-sectional view of the Se-implanted sample after annealing with TB = 3.1 µm. (...
Figure 5: SEM plan-view image obtained after annealing a 340 nm thick Ge layer sputtered on the native Si oxi...
Figure 1: A schematic representation of one-site CM, SSQC and CDCT (for more details see [41]). When SSQC occurs,...
Figure 2: Electronic structures of Si35H36, Si87H76, Si147H100 and Si293H172 are reported in (a). CM lifetime...
Figure 3: Calculated total CM, SSQC and CDCT lifetimes are reported in (a), (b) and (c), respectively, for th...
Figure 4:
A representation of the systems Si87H76 × Si293H172 and is given in the upper part of the figure. ...
Figure 1: Scanning electron micrographs of SWCNT (a,c) and MWCNT (b,d) films at different magnifications 200,...
Figure 2: Scanning electron micrographs of SWCNT/MWCNT (a,c) and MWCNT/SWCNT (b,d) films at different magnifi...
Figure 3: Water droplets cast on SWCNT (a), MWCNT (b), SWCNT/MWCNT (c), and MWCNT/SWCNT (d) films. Owing to t...
Figure 4: (a) Contact angle of the SWCNT/MWCNT (blue squares) and MWCNT (red dots) films as a function of eth...
Figure 5: Variations of the contact angle as a function of the elapsed time from drop cast on the porous SWCN...
Figure 1: LEED pattern of (a) the clean TiO2(110) surface showing the 1 × 1 termination (electron beam energy ...
Figure 2: STM images in water of the TiO2(110) surface after Ca segregation (a) 370.5 × 370.5 nm2, Vbias = −1...
Figure 3: STM image in water of the Ca/TiO2(110) surface after Ca segregation, 27.3 × 27.3 nm2, Vbias = −1 V, ...
Figure 4: STM images in water of the Ca/TiO2(110) surface recorded after a 48 h immersion in the liquid (a) 1...
Figure 1: SEM micrographs of CdTe nanowires deposited at (a) −400 mV; (b) −500 mV; (c) −550 mV; (d) −600 mV; ...
Figure 2: (a) EDX spectra for a series of samples prepared at different electrode potentials; (b) Cd content ...
Figure 3: (a) Spectral reflectance curve and (b) Kubelka–Munk representation for band gap determination of Cd...
Figure 4: (a) The system of electrodes produced by lithography for contacting the nanowire; (b) an image of a...
Figure 5: (a) Current–voltage characteristics for a CdTe nanowire contacted by FIBIM; (b) Current–voltage cha...
Figure 1: Schematic structures of infinite, linear, sp-carbon wires: (a) equalized wire with all double bonds...
Figure 2: (a–d) carbon-atom wires with different terminations: hydrogen-capped (a), phenyl-capped (b), vinyli...
Figure 3: (a) Experimental Raman spectra of carbon solids and nanostructures. (b,c) DFT-computed Raman peaks ...
Figure 4: (a) Experimental Raman spectrum (1064 nm) of H-capped polyynes in methanol (5 × 10−3 M), with the p...
Figure 5: (a) Experimental Raman spectrum (1064 nm) of phenyl-capped polyynes in decalin (10−2 M) with the pu...
Figure 6: Raman and SERS spectra of H-capped (a) and phenyl-capped (b) polyynes in solution at different exci...
Figure 7: (a) Modulation of the DFT-computed [39] vibrational frequency and (b) Raman activity of the ECC band fo...
Figure 8: (a) Plot of the DFT-computed energy [39] required for the formation of the charged species (Eion = IP(A...
Figure 1: Top: the electrostatic pressure resulting from a dc voltage drop on the insulating molecular monola...
Figure 2: Imaginary electrical modulus M″(ω) of the Hg/acid 5/n-type Si junction: a) reverse-bias dependence ...
Figure 3: Decomposition of the electrical modulus M″(ω) obtained at T = 263 K and VDC = −0.6 V into three dip...
Figure 4: Temperature dependence of the dipolar relaxation frequencies fB1 (a) and fB2 (b) obtained for the H...
Figure 5: Bias dependence of dipolar relaxation activation energies, EB1 (squares) and EB2 (circles). The lin...
Figure 6: Linear correlation between activation energy and pre-exponential factor values derived from Figure 4, for p...
Figure 7: Temperature dependence of the dipolar relaxation strength Δε of peaks B1 and B2, measured at revers...
Figure 1: High resolution Ti 2p (left) and O 1s (right) XPS spectra of pristine titanium surfaces (A) and sur...
Figure 2: FTIR spectra of starting neridronate (A), APTES (B) and dopamine (C) organic moieties in their nati...
Figure 3: High resolution C 1s XPS spectra of neridronate (A), APTES siloxane (B) and PDA (C) films on the su...
Figure 4: AFM images of the neat, flat titanium surface (RRMS = 0.5 ± 0.3 nm) (A), and confluent anchor layer...
Figure 5: Differential IRRAS spectra of free alginate adsorbed onto a flat titanium surface (A) and covalentl...
Figure 6: High resolution C 1s XPS spectra of alginate coatings on neridronate (A), APTES siloxane (B) and PD...
Figure 7: Ellipsometric thickness and water contact angle evolution of ALG bound to neridronate, APTES siloxa...
Figure 8: Evolution of IRRAS spectra of ALG bound to neridronate (A), to APTES siloxane (B) and to PDA (C) up...
Scheme 1: Performed surface treatments and subsequent reactions for the activation and modification of titani...
Figure 1: Tilted-view, SEM observations of SiNW samples without tapering (a) and for different tapering times...
Figure 2: TEM image of a silicon nanowire obtained using the same conditions as those in Figure 1a.
Figure 3: Reflection spectra of SiNWs in the visible spectral range without tapering and after 10, 30, and 50...
Scheme 1: Polymerization reaction scheme for PEDOT synthesis.
Scheme 2: Polymer reduction reaction scheme for PEDOT.
Figure 4: Two successive CVs performed on vitreous carbon with 10 mM EDOT and 0.1 M LiClO4 in acetonitrile so...
Figure 5: 10 successive CVs performed on vitreous carbon with 10 mM EDOT and 0.1 M LiClO4 in acetonitrile sol...
Figure 6: FTIR spectrum of a PEDOT film electropolymerized onto vitreous carbon.
Figure 7: CVs of PEDOT deposition on SiNWs under various conditions. Scan rate: 100 mV/s. (a) 10 mM EDOT with...
Figure 8: Two successive CVs performed on SiNWs under illumination with 10 mM EDOT and 0.1 M LiClO4 in aceton...
Figure 9: (a) SEM tilted-view of PEDOT covering the top of a SiNW array after 5 s of electrodeposition; (b) c...
Figure 10: Tilted-view SEM images of SiNWs after PEDOT deposition at 1.5 V pulse deposition with a 10 mM EDOT ...
Figure 11: Cross-sectional view of HRSEM images of SiNWs/PEDOT sample after 10 s tapering (a) and 30 s taperin...
Figure 12: TEM image of a single SiNW/PEDOT after 30 s of tapering (corresponding to the sample in 11b).
Figure 13: Schematic illustration of the processes resulting in PEDOT/SiNW hybrid structures. (a) Continuous e...
Figure 14: Current–potential characterization of the diodes with SiNW arrays tapered for 10 s (solid line) and...
Figure 1: (a) SEM images of the disk-on-disk nanostructure with s = 0, 170 and 230 nm; (b) Dependence of Mr/Ms...
Figure 2: MFM images of magnetic structure (upper row) and corresponding spin configurations (bottom row) in ...
Figure 3: Spin configurations realized in the disk-on-disk nanostructure in dependence on an external magneti...
Figure 4: Hysteresis loops corresponding to the magnetization reversal of the disk-on-disk nanostructure with...
Figure 5: Spin configurations in the disk-on-disk nanostructure during the magnetization reversal under the a...
Figure 6: Hysteresis loops measured under a field ranging from +500 to −500 Oe (black line), as well as under...
Figure 7: Scheme explaining the interplay between the orientation of an external magnetic field (angles are m...
Figure 1: (a) Schematic front view and (b) side view of the Si substrate produced by Fondazione Bruno Kessler...
Figure 2: (a) Scanning electron microscopy (SEM) image of MWCNT samples grown on the implantation area. The i...
Figure 3: Dark current comparison of the Si substrate and the CNT–Si heterojunction.
Figure 4: (a) Details of the dark current around the threshold voltage with a curve fit. (b) C–V plot of the ...
Figure 5: (a) Photocurrent induced by a 730 nm continuous wave, low power light source at various illuminatio...
Figure 6: (a) Dark current and photocurrent tunneling in a CNT–Si heterojunction under 378 nm light illuminat...
Figure 1: Left: Lateral connection of a quantum ring (Nring = 8) to external wires (any even number of sides ...
Figure 2: Pattern in the y–z-plane of the electric field produced by a pure spin current flowing in the lead,...
Figure 3: Upper panel: up-spin population of the left storage cube versus time measured in units of τ. Lower ...
Figure 4: Upper panel: up-spin population on the left storage cube versus time measured in units of τ. Lower ...
Figure 5: Spin-up current from the left storage cube in the cube–cube connection, when both storage cubes hav...
Figure 1: A typical Raman spectrum of the dense ensemble of CuS NCs (about 5–6 MLs) on a Au substrate excited...
Figure 2: Raman spectra of CuS NCs (of about 1 ML coverage) fabricated on a Si substrate with a SiO2 layer of...
Figure 3: The dependence of the IERS enhancement factor of phonon modes in CuS NCs on the thickness of the SiO...
Figure 4: a) SEM image and b) micro-Raman spectra of CuS NCs deposited on Si (lower part) and Au nanocluster ...
Figure 5: Raman spectra of CuS NCs deposited on bare Si, 75 nm SiO2 layer on Si, and on Au arrays fabricated ...
Figure 6: a) SEM image of CuS NCs with an ultra-low areal density deposited on Au arrays on SiO2 layer and b)...
Figure 1:
Valence levels and (broadened) DOS for the neutral (C60) and ionized () fullerene molecules, as com...
Figure 2: Lowest and highest occupied valence states for the neutral fullerene molecule (C60) and correspondi...
Figure 3: Energy levels and (broadened) density of states for a trapped gas of spin 1/2 fermions having a num...
Figure 4: Lowest and highest occupied one-particle wave functions and levels for a harmonically trapped gas o...
Figure 5: Zero-temperature work-distribution components (Equation 7) for a C60 molecule undergoing core ionization, and...
Figure 6: Low-temperature work distributions for: (left) a C60 molecule undergoing core-ionization; (center,r...
Figure 1: STM images recorded at 77 K at submonolayer Si coverage showing single and double Si nanoribbons (N...
Figure 2: (a,b) STM images at different magnification scales, recorded at 77 K for a Co coverage of approx. 0...
Figure 3: XAS spectra taken at normal incidence (Θ = 0°) for both helicities (σ+ and σ−) at 4 K with a magnet...
Figure 4: (a) Hysteresis loops of 2 MLCo on Si/Ag(110) measured at 4 K at normal (Θ = 0°) and grazing (Θ = 70...
Figure 1: Photograph of a dish containing CNT-sponges, and two cut pieces of few cubic mm.
Figure 2: SEM micrographs showing the entangled structure of the network acquired at two different magnificat...
Figure 3: Electron energy loss spectra (Ep = 300 eV) obtained on the CNT-sponge. The π and π + σ plasmons hav...
Figure 4: Photographs of water droplets of different volumes (a) and contact angle profile of a single drop (...
Figure 5: Stability of the super-hydrophobic state. No roll-off angle was measured, even when the substrate i...
Figure 6: Burning and reuse of the CNT-sponge. Photograph of the starting of the oil-adsorption process (a), ...
Figure 7: SEM micrographs of the CNT-sponge surface after one (a) and two (b) burning processes. Corresponden...
Figure 8: Incident-photon-to-current efficiency (IPCE, %) obtained from a MWCNT 2D film (purple circles), and...
Figure 1: Surface relief of the GeTiO film after laser irradiation with 100 laser pulses at 15 mJ/cm2 fluence...
Figure 2: Low-magnification XTEM images of the amorphous GeTiO film, before (a) and after (b) laser irradiati...
Figure 3: XTEM images of the amorphous GeTiO RF film after laser irradiation with 266 nm laser radiation. (a)...
Figure 4: Morphology details of the GeTiO film surface layer structure revealed by the cross sectional observ...
Figure 5: STEM-HAADF image (left) and a detail from the same image correlated with line scan EDX analyse (rig...
Figure 6: Size distribution of the Ge nanoparticles in region II of the laser transformed layer. The distribu...
Figure 7: EDX spectra collected on the cross section specimen with an electron beam of 50 nm diameter. (a) Sp...
Figure 8: Temperature estimation for different depths beneath the GeTiO film surface during the laser pulse a...
Figure 9: Crystallization (a) and subsequent crystal growth (b) of the Ge amorphous nanoparticle under the hi...
Figure 10: High-resolution TEM images comparing details of the initial crystallized particle (a) and the same ...
Figure 1: SEM images demonstrating the effect of substrate on the single-spot overexposure of a ring at a dos...
Figure 2: Single-spot overexposure of a ring dependening on the substrate type: (a) a single-crystal Si subst...
Figure 3: Effect of the exposure dose and substrate material on the single-spot pattern formation: (a) the ri...
Figure 4: (a,c) Monte Carlo simulation of 250 electron scattering trajectories at 10 keV incident energy in a...
Figure 5: AFM images of the ring, patterned on the silicon substrate coated by a 120 nm thick PMMA A2 resist:...
Figure 6: Dependence of dout (a) and din (b) on the exposure dose at an acceleration voltage of 10 kV for dif...
Figure 7: SEM images demonstrating the effect of changing the ds between the electron beam spots with a dose ...
Figure 8: Polymer nanostructures fabricated on a PMMA A2 resist of 75 nm thickness at an acceleration voltage...
Figure 9: Effect of the acceleration voltage on the formation of polygons on Si (a–c) and Au (d–f) substrates...
Figure 10: (a,b) Electron energy distribution in a 75 nm thick PMMA layer on a bulk Si substrate at 15 and 20 ...
Figure 11: 3D AFM images of polymer nanostructures fabricated on PMMA A2 resist with thickness of 75 nm on Si ...
Figure 12: Demonstration of the proximity effect using nanostructures fabricated on a PMMA A2 resist with a th...
Figure 13: An example of a complex polymer pattern with a minimum line width of 15 nm fabricated at an acceler...
Figure 14: SEM images of Co nanostructures formed on the pre-patterned Si substrate: (a) circle, (b) double ci...
Figure 1: Frequency dependence of the real (dashed lines) and imaginary (solid lines) parts of the permeabili...
Figure 2: Frequency dependencies of the real (dashed lines) and imaginary (solid lines) parts of the permeabi...
Figure 3: Frequency dependence of the real (dashed lines) and imaginary (solid lines) parts of the permeabili...
Figure 4: Frequency dependence of the real (dashed lines) and imaginary (solid lines) parts of the permeabili...
Figure 1: SEM images of a six-cantilevers array (2 μm thickness) obtained through chemical photolithography: ...
Figure 2: a) Frequency responses of Si rectangular cantilever (2 μm thick, 100 μm long and 30 μm wide) in the...
Figure 3: Frequency responses of AAO rectangular cantilever (2 μm thick, 800 μm long and 100 μm wide) at rela...
Figure 4: Resonance frequency of the AAO cantilevers (2 μm thick, 800 μm long and 100 μm wide) as function of...
Figure 5: Photomask (1); cantilever arrays as formed on Al-foil (2); free-standing anodic alumina cantilevers...
Figure 6: Scheme of measurement cell in atomic force microscope with an integrated optical read-out.
Figure 7: Spectrum of lateral (in-plane) modes corresponding to an alumina cantilever 2 μm thick, 800 μm long...