Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

Scholarly Works

• Han, Y.; Chae, M.; Choi, D.; Song, I.; Ko, C.; Cresti, A.; Theodorou, C.; Joo, M.-K. Negative Differential Interlayer Resistance in WSe2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts. ACS applied materials & interfaces 2023, 15, 58605–58612. doi:10.1021/acsami.3c13699
• Ghiami, A.; Sun, T.; Fiadziushkin, H.; Tang, S.; Grundmann, A.; Heuken, M.; Kalisch, H.; Vescan, A. Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC. Crystals 2023, 13, 1474. doi:10.3390/cryst13101474
• Kumar, A.; Faella, E.; Durante, O.; Giubileo, F.; Pelella, A.; Viscardi, L.; Intonti, K.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A. Optoelectronic memory in 2D MoS2 field effect transistor. Journal of Physics and Chemistry of Solids 2023, 179, 111406. doi:10.1016/j.jpcs.2023.111406
• Intonti, K.; Faella, E.; Viscardi, L.; Kumar, A.; Durante, O.; Giubileo, F.; Passacantando, M.; Lam, H. T.; Anastasiou, K.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A. Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure. Advanced Electronic Materials 2023, 9. doi:10.1002/aelm.202300066
• Jeong, W.; Kim, T.; Kim, Y.; Jeong, M. S.; Kim, E. K. Improved characteristics of MoS2 transistors with selective doping using 1,2-dichloroethane. Semiconductor Science and Technology 2023, 38, 75013–075013. doi:10.1088/1361-6641/acd808
• Sharma, S.; Das, S.; Khosla, R.; Shrimali, H.; Sharma, S. K. Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors. IEEE Transactions on Electron Devices 2023, 70, 1520–1526. doi:10.1109/ted.2022.3202510
• Viscardi, L.; Intonti, K.; Kumar, A.; Faella, E.; Pelella, A.; Giubileo, F.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A. Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts. physica status solidi (b) 2023, 260. doi:10.1002/pssb.202200537
• Khattak, Z. J.; Sajid, M.; Javed, M.; Zeeshan Rizvi, H. M.; Awan, F. S. Mass-Producible 2D Nanocomposite-Based Temperature-Independent All-Printed Relative Humidity Sensor. ACS omega 2022, 7, 16605–16615. doi:10.1021/acsomega.2c00850
• Rai, A.; Roy, A.; Valsaraj, A.; Chowdhury, S.; Taneja, D.; Wang, Y.; Register, L. F.; Banerjee, S. K. Devices and defects in two-dimensional materials: outlook and perspectives. Defects in Two-Dimensional Materials; Elsevier, 2022; pp 339–401. doi:10.1016/b978-0-12-820292-0.00017-3
• Grillo, A.; Faella, E.; Pelella, A.; Giubileo, F.; Ansari, L.; Gity, F.; Hurley, P. K.; McEvoy, N.; Di Bartolomeo, A. Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors. Advanced Functional Materials 2021, 31, 2105722. doi:10.1002/adfm.202105722
• Aftab, S.; Samiya; Hussain, M. S.; Elahi, E.; Yousuf, S.; Ajmal, H. M. S.; Iqbal, M. W.; Iqbal, M. Z. ReSe2/metal interface for hydrogen gas sensing. Journal of colloid and interface science 2021, 603, 511–517. doi:10.1016/j.jcis.2021.06.117
• Brus, P.; Zatko, V.; Galbiati, M.; Godel, F.; Collin, S.; Servet, B.; Xavier, S.; Aubry, R.; Garabedian, P.; Martin, M.-B.; Dlubak, B.; Seneor, P.; Bezencenet, O. Large-Scale-Compatible Stabilization of a 2D Semiconductor Platform toward Discrete Components. Advanced Electronic Materials 2021, 7, 2001109. doi:10.1002/aelm.202001109
• Vaknin, Y.; Dagan, R.; Rosenwaks, Y. Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors. Nanomaterials (Basel, Switzerland) 2020, 10, 2346. doi:10.3390/nano10122346
• Kaushik, V.; Ahmad, M.; Agarwal, K.; Varandani, D.; Belle, B. D.; Das, P.; Mehta, B. R. Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity. The Journal of Physical Chemistry C 2020, 124, 23368–23379. doi:10.1021/acs.jpcc.0c05651
• Mohamed, A.; Ghazali, N.; Chong, H. M. H.; Cobley, R. J.; Li, L.; Kalna, K. Channel mobility and contact resistance in scaled ZnO thin-film transistors. Solid-State Electronics 2020, 172, 107867. doi:10.1016/j.sse.2020.107867
• Matsuura, K.; Hamada, M.; Hamada, T.; Tanigawa, H.; Sakamoto, T.; Hori, A.; Muneta, I.; Kawanago, T.; Kakushima, K.; Tsutsui, K.; Ogura, A.; Wakabayashi, H. Normally-off sputtered-MoS 2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration. Japanese Journal of Applied Physics 2020, 59, 080906. doi:10.35848/1347-4065/aba9a3
• Ma, R. Ph.D. Thesis, Aug 1, 2020.
• Sun, H.; Zhou, X.; Wang, X.; Xu, L.; Zhang, J.; Jiang, K.; Shang, L.; Hu, Z.; Chu, J. P–N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W(SxSe1−x)2 field-effect transistors. Nanoscale 2020, 12, 15304–15317. doi:10.1039/d0nr04633g
• Yan, W.; Lv, C.; Zhang, D.; Chen, Y.; Zhang, L.; Coileáin, C. Ó.; Wang, Z.; Jiang, Z.; Hung, K.-M.; Chang, C.-R.; Wu, H.-C. Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors. ACS applied materials & interfaces 2020, 12, 26746–26754. doi:10.1021/acsami.0c07193
• Giannazzo, F.; Schilirò, E.; Greco, G.; Roccaforte, F. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures. Nanomaterials (Basel, Switzerland) 2020, 10, 803. doi:10.3390/nano10040803

Explore citations to this article at