Cite the Following Article
Electrical characterization of single nanometer-wide Si fins in dense arrays
Steven Folkersma, Janusz Bogdanowicz, Andreas Schulze, Paola Favia, Dirch H. Petersen, Ole Hansen, Henrik H. Henrichsen, Peter F. Nielsen, Lior Shiv and Wilfried Vandervorst
Beilstein J. Nanotechnol. 2018, 9, 1863–1867.
https://doi.org/10.3762/bjnano.9.178
How to Cite
Folkersma, S.; Bogdanowicz, J.; Schulze, A.; Favia, P.; Petersen, D. H.; Hansen, O.; Henrichsen, H. H.; Nielsen, P. F.; Shiv, L.; Vandervorst, W. Beilstein J. Nanotechnol. 2018, 9, 1863–1867. doi:10.3762/bjnano.9.178
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Scholarly Works
- Marangoni, T. A.; Guralnik, B.; Borup, K. A.; Hansen, O.; Petersen, D. H. Determination of the temperature coefficient of resistance from micro four-point probe measurements. Journal of Applied Physics 2021, 129, 165105. doi:10.1063/5.0046591
- Folkersma, S.; Bogdanowicz, J.; Favia, P.; Wouters, L.; Petersen, D. H.; Hansen, O.; Henrichsen, H. H.; Nielsen, P. F.; Shiv, L.; Vandervorst, W. Apparent size effects on dopant activation in nanometer-wide Si fins. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2021, 39, 023202. doi:10.1116/6.0000921
- Celano, U.; Paredis, K.; Vandervorst, W.; van der Heide, P.; Hantschel, T.; Boehme, T.; Kanniainen, A.; Wouters, L.; Bender, H.; Bosman, N.; Drijbooms, C.; Folkersma, S. Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes. In 2019 IEEE International Electron Devices Meeting (IEDM), IEEE, 2019. doi:10.1109/iedm19573.2019.8993661
- Folkersma, S.; Bogdanowicz, J.; Petersen, D. H.; Hansen, O.; Henrichsen, H. H.; Nielsen, P. F.; Shiv, L.; Vandervorst, W. Electrical Contact Formation in Micro Four‐Point Probe Measurements. physica status solidi (a) 2019, 217, 1900579. doi:10.1002/pssa.201900579
Patents
- PETERSEN DIRCH HJORTH; HANSEN OLE; HENRICHSEN HENRIK HARTMANN; GURALNIK BENNY. Measuring temperature-modulated properties of a test sample. US 11740279 B2, Aug 29, 2023.
