Metrology and technology computer aided design for the sub-10 nm technology node

  1. editorImage
  1. Editors
    Dr. Pierre Eyben, IMEC, Belgium
    Dr. Ray Duffy, Tyndall National Institute/University College Cork, Ireland
    Dr. Narciso Gambacorti, Nanocharacterization platform - CEA- LETI, France
    Prof. Enrico Napolitani, CNR-IMM MATIS/University of Padova, Italy

Scaling towards the sub-10nm technology node involves the development of new materials (e.g., Ge, III-V, graphene) and new device architectures (e.g., FinFETs, GAA-FETs, thin-film FETs). The more complex underlying physics at this scale and the exponential increase of technological options has led to growing integration challenges, and hence, to a growing need for technology computer aided design (TCAD) simulations. Furthermore, the development of TCAD tools is intimately linked with the development of advanced metrology solutions to calibrate them. Thus, this collection of articles aims to present recent progresses in advanced metrology and innovative solutions necessitating physical simulations to replace experiments and facilitate the rapid development of new devices. Additionally, current integration challenges for such new devices are highlighted. Topics include:

    • 2D/3D dopant and carrier profiling techniques with nanometer resolution
    • Metrology techniques that provide information about sub-10 nm structures with sufficient depth and 2D/3D resolution (e.g., electrical AFM, atom probe or electron holography, TOF-SIMS, s-SNOM, TEM)
    • New high-mobility channel materials (III-V and Ge)
    • Thin body (ultra-thin SOI, double or tri-gate multigates, nanowires) and vertical gate-all-around device architectures
    • Novel contact and doping techniques for low-access resistance
    • Physical simulations (ab-initio, molecular dynamics, lattice/on-lattice kinetic Monte Carlo, partial differential equations) for the development of new sub-10 nm devices

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

  1. Daniel Hiller,
  2. Julian López-Vidrier,
  3. Keita Nomoto,
  4. Michael Wahl,
  5. Wolfgang Bock,
  6. Tomáš Chlouba,
  7. František Trojánek,
  8. Sebastian Gutsch,
  9. Margit Zacharias,
  10. Dirk König,
  11. Petr Malý and
  12. Michael Kopnarski
  • Full Research Paper
  • Published 18 May 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

  • Full Research Paper
  • Published 22 Jun 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

Electrical characterization of single nanometer-wide Si fins in dense arrays

  1. Steven Folkersma,
  2. Janusz Bogdanowicz,
  3. Andreas Schulze,
  4. Paola Favia,
  5. Dirch H. Petersen,
  6. Ole Hansen,
  7. Henrik H. Henrichsen,
  8. Peter F. Nielsen,
  9. Lior Shiv and
  10. Wilfried Vandervorst
  • Full Research Paper
  • Published 25 Jun 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

  1. Richard Daubriac,
  2. Emmanuel Scheid,
  3. Hiba Rizk,
  4. Richard Monflier,
  5. Sylvain Joblot,
  6. Rémi Beneyton,
  7. Pablo Acosta Alba,
  8. Sébastien Kerdilès and
  9. Filadelfo Cristiano
  • Full Research Paper
  • Published 05 Jul 2018

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Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

A variable probe pitch micro-Hall effect method

  1. Maria-Louise Witthøft,
  2. Frederik W. Østerberg,
  3. Janusz Bogdanowicz,
  4. Rong Lin,
  5. Henrik H. Henrichsen,
  6. Ole Hansen and
  7. Dirch H. Petersen
  • Full Research Paper
  • Published 20 Jul 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

  1. Noel Kennedy,
  2. Ray Duffy,
  3. Luke Eaton,
  4. Dan O’Connell,
  5. Scott Monaghan,
  6. Shane Garvey,
  7. James Connolly,
  8. Chris Hatem,
  9. Justin D. Holmes and
  10. Brenda Long
  • Full Research Paper
  • Published 06 Aug 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

  1. Dirk König,
  2. Daniel Hiller,
  3. Noël Wilck,
  4. Birger Berghoff,
  5. Merlin Müller,
  6. Sangeeta Thakur,
  7. Giovanni Di Santo,
  8. Luca Petaccia,
  9. Joachim Mayer,
  10. Sean Smith and
  11. Joachim Knoch
  • Full Research Paper
  • Published 23 Aug 2018

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Graphical Abstract

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

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