A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès and Filadelfo Cristiano
Beilstein J. Nanotechnol. 2018, 9, 1926–1939. https://doi.org/10.3762/bjnano.9.184

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers
Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès and Filadelfo Cristiano
Beilstein J. Nanotechnol. 2018, 9, 1926–1939. https://doi.org/10.3762/bjnano.9.184

How to Cite

Daubriac, R.; Scheid, E.; Rizk, H.; Monflier, R.; Joblot, S.; Beneyton, R.; Acosta Alba, P.; Kerdilès, S.; Cristiano, F. Beilstein J. Nanotechnol. 2018, 9, 1926–1939. doi:10.3762/bjnano.9.184

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